Adsorption and thermal dissociation of Si2H6 on Si(100)2×1 surfaces has been studied using electron energy loss spectroscopy (EELS) and reflection high‐energy electron diffraction (RHEED). Surface reactions were followed by recording the intensities and the positions of EELS peaks associated with dangling bonds on the initial 2×1 surface, surface Si–H bonds, and the appearance of dangling bonds due to Si dimer bond rupture together with the relative intensities of the integral and half‐order RHEED diffraction spots. The results indicate that with continued disilane exposure, Si2H6 is dissociatively chemisorbed onto dangling bond sites on Si(100) and the initially adsorbed species (probably SiH3) further dissociate to form a mixed (2×1):H monohydride and (1×1)::2H dihydride surface. The mixed surface is then slowly converted to a (1×1)::2H surface through further reactions with Si2H6. While the Si(100)2×1 dangling bonds were saturated at Si2H6 doses of ≂5×1015 cm−2, much higher doses (≂2×1017 cm−2) were required to obtain a dihydride‐saturated surface. Saturated (1×1)::2H surfaces were annealed to successively higher temperatures Ta for 15 s each. At Ta=655 K, hydrogen was evolved leading to the reestablishment of a mixed (2×1):H+(1×1)::2H surface. Most of the remaining dihydride was converted to monohydride at temperatures between 705 and 725 K. The 2×1 dangling‐bond EELS peak reemerged at Ta=765 K and the clean‐surface 2×1 EELS spectrum, signaling the evolution of the remaining H from the new epitaxial Si layer, was obtained after annealing at 955 K. Implications of these results for Si growth by atomic‐layer epitaxy is discussed.
Skip Nav Destination
Article navigation
January 1990
Research Article|
January 01 1990
Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1
Y. Suda;
Y. Suda
Materials Science Department, the Coordinated Science Laboratory, and the Materials Science Laboratory, University of Illinois, 1101 W. Springfield Avenue, Urbana, Illinois 61801
Search for other works by this author on:
D. Lubben;
D. Lubben
Materials Science Department, the Coordinated Science Laboratory, and the Materials Science Laboratory, University of Illinois, 1101 W. Springfield Avenue, Urbana, Illinois 61801
Search for other works by this author on:
T. Motooka;
T. Motooka
Materials Science Department, the Coordinated Science Laboratory, and the Materials Science Laboratory, University of Illinois, 1101 W. Springfield Avenue, Urbana, Illinois 61801
Search for other works by this author on:
J. E. Greene
J. E. Greene
Materials Science Department, the Coordinated Science Laboratory, and the Materials Science Laboratory, University of Illinois, 1101 W. Springfield Avenue, Urbana, Illinois 61801
Search for other works by this author on:
J. Vac. Sci. Technol. A 8, 61–67 (1990)
Article history
Received:
June 05 1989
Accepted:
August 19 1989
Citation
Y. Suda, D. Lubben, T. Motooka, J. E. Greene; Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1. J. Vac. Sci. Technol. A 1 January 1990; 8 (1): 61–67. https://doi.org/10.1116/1.576356
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride
Thorsten Lill, Mingmei Wang, et al.
Atomic layer deposition of nanofilms on porous polymer substrates: Strategies for success
Brian C. Welch, Jeanne Casetta, et al.
Surface passivation approaches for silicon, germanium, and III–V semiconductors
Roel J. Theeuwes, Wilhelmus M. M. Kessels, et al.
Related Content
State‐specific study of hydrogen desorption from Si(100)‐(2×1): Comparison of disilane and hydrogen adsorption
J. Vac. Sci. Technol. A (July 1992)
Cold‐wall ultrahigh vacuum chemical vapor deposition of doped and undoped Si and Si1−xGex epitaxial films using SiH4 and Si2H6
J. Vac. Sci. Technol. A (January 1996)
Reflection high‐energy electron diffraction intensity oscillations and surface reconstructions measured during epitaxial growth of Si(001) from Si2H6 molecular beams
J. Vac. Sci. Technol. A (July 1992)
Comparison of disilane and hydrogen adsorption on Si(111)‐7×7
J. Vac. Sci. Technol. B (September 1989)
Nanoscale selective adsorption of disilane on the Si(111) surface partially terminated by Ga atoms
J. Vac. Sci. Technol. B (January 1997)