Thin films (≊2 μm) of boron nitride, titanium boron nitride, and titanium aluminum boron nitride have been grown on molybdenum, niobium, and cemented carbide substrates employing nonreactive as well as reactive rf magnetron sputter deposition from either a BN, a TiN‐BN, or a TiN–AlN–BN target. Substrates have been rf biased, with dc potentials up to −200 V. By means of nonreactive sputtering mixed‐phase structures with dominant phases B48B2N2 (using a BN target), or B48B2N2 and hexagonal Ti–B–N (using a TiN–BN or a TiN–AlN–BN target) are formed. Reactive deposition leads to the existence of hexagonal BN in all deposition modes. In the cases of Ti–B–N and Ti–Al–B–N films this phase is accompanied by fcc Ti–B–N. SEM cross sections revealed very fine grained to fracture‐amorphous film structures. Hardness measurements gave the following maximum HV 0.02 values: B–N films 2800, Ti–B–N films 2750, and Ti–Al–B–N films 1650.
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July 1989
Research Article|
July 01 1989
Radio‐frequency sputter deposition of boron nitride based thin films
C. Mitterer;
C. Mitterer
Metallwerk Plansee G.m.b.h., A‐6600 Reutte, Austria
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P. Rödhammer;
P. Rödhammer
Metallwerk Plansee G.m.b.h., A‐6600 Reutte, Austria
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H. Störi;
H. Störi
Institut für Allgemeine Physik, Technische Universität, Wiedner Hauptstrasse 8‐10, A‐1040 Wien, Austria
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F. Jeglitsch
F. Jeglitsch
Institut für Metallkunde und Werkstoffprüfung, Montanuniversität, Franz‐Josef‐Strasse 18, A‐8700 Leoben, Austria
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J. Vac. Sci. Technol. A 7, 2646–2651 (1989)
Article history
Received:
November 28 1988
Accepted:
January 21 1989
Citation
C. Mitterer, P. Rödhammer, H. Störi, F. Jeglitsch; Radio‐frequency sputter deposition of boron nitride based thin films. J. Vac. Sci. Technol. A 1 July 1989; 7 (4): 2646–2651. https://doi.org/10.1116/1.575767
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