The buildup of damage induced by In ion implantation into Hg1−x Cdx Te for various composition (x=0, x=0.24, x=0.4, x=0.7, and x=1) was measured by means of channeling Rutherford backscattering spectroscopy (RBS). Damage profiles were extracted from the spectra using a model based on Quere’s dechanneling treatment. Despite the large difference in bond nature and the related physical properties between the different compositions, the general trends in damage formation were found similar for all x values studied, though displaced by about two orders of magnitude in dose, HgTe damaging much easier than CdTe. For all compositions, different types of damage seem to be created at different stages during the implantation. The results can be understood if agglomeration of point defects to extended defects followed by a redistribution of the defects to deeper lying clusters with increasing dose is assumed.
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Research Article| July 01 1989
Buildup of ion implantation damage in Hg1−x CdxTe for various x values
C. Uzan‐Saguy, D. Comedi, V. Richter, R. Kalish, R. Triboulet; Buildup of ion implantation damage in Hg1−x CdxTe for various x values. J. Vac. Sci. Technol. A 1 July 1989; 7 (4): 2575–2579. https://doi.org/10.1116/1.575799
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