A photoemission spectroscopy study has been performed to investigate the 80 K low temperature (LT) to room temperature (RT) transition at the In/GaAs(110) interface. In/GaAs interfaces prepared at LT were slowly brought to RT while changes in overlayer morphology and band bending were observed via the Ga 3d and In 4d core level spectra. When several monolayers of In were deposited on LT p‐GaAs and this interface was subsequently warmed to RT, the band bending increased from the high‐coverage value of 0.5 eV to the 0.8 eV ‘‘overshoot’’ value that is seen at submonolayer coverages. From examination of the In 4d spectra, the In overlayer was found to cluster strongly upon warming, but In chemisorbed to the substrate remained between the clusters. The return of the overshoot that accompanies this In clustering may be explained by attributing the overshoot to states provided by the chemisorbed In. This reovershoot upon clustering further implies that the high‐coverage pinning of the In/LT p‐GaAs is due directly to the presence of the In overlayer rather than deposition‐induced defects in the GaAs.
Skip Nav Destination
Article navigation
Research Article|
May 01 1989
Temperature control of morphology and barrier formation at the In/GaAs(110) interface
K. E. Miyano;
K. E. Miyano
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
Search for other works by this author on:
R. Cao;
R. Cao
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
Search for other works by this author on:
T. Kendelewicz;
T. Kendelewicz
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
Search for other works by this author on:
I. Lindau;
I. Lindau
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
Search for other works by this author on:
W. E. Spicer
W. E. Spicer
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
Search for other works by this author on:
J. Vac. Sci. Technol. A 7, 731–737 (1989)
Article history
Received:
August 19 1988
Accepted:
November 14 1988
Citation
K. E. Miyano, R. Cao, T. Kendelewicz, I. Lindau, W. E. Spicer; Temperature control of morphology and barrier formation at the In/GaAs(110) interface. J. Vac. Sci. Technol. A 1 May 1989; 7 (3): 731–737. https://doi.org/10.1116/1.575875
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Infrared Spectra of Ammonia Suspended in Solid Nitrogen
J. Chem. Phys. (July 2004)
Band bending at low‐temperature metal/III–V semiconductor interfaces: The overshoot phenomenon
J. Vac. Sci. Technol. B (July 1991)
Adsorbate‐induced surface states and Fermi‐level pinning at semiconductor surfaces
J. Vac. Sci. Technol. B (September 1989)
Mixed integer nonlinear programming model of wireless pricing scheme with QoS attribute of bandwidth and end-to-end delay
AIP Conference Proceedings (February 2016)
Summary Abstract: Molecular beam epitaxy GaAs integrated impatt structure
J. Vac. Sci. Technol. B (March 1985)