The growth of single‐crystal NiSi2 and CoSi2 thin films on silicon is briefly reviewed. Recent results concerning the growth of epitaxial CoSi2 on Si(111) are also included. Various growth models to explain the observed epitaxial orientations based on reaction kinetics and interface energetics are examined. Present experimental data of the Schottky barrier heights and atomic structures of epitaxial silicide interfaces will be discussed and compared with results from recent calculations.

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