Rapid thermal processing (RTP) of Ni(30 nm)/Al(10 nm)/Sin〈100〉 and Ti(30 nm)/Al(10 nm)/Sip〈100〉 at temperatures between 580 and 900 °C for 2 s resulted in the formation of unique contact structure due to an eutectic melting reaction initiated at the Al–Si interface. These contacts are in general composed Al compound layers on a metal silicide layer on the Si substrate and have a fairly smooth interface between the layers and the silicon. In the Ti/Al/Si system, the silicide layer of TiSi2 (45 nm thick) grew epitaxially. In both the Ni/Al/Si and Ti/Al/Si systems the Schottky barrier height and the sheet resistance of the layered structure were strongly affected by the eutectic melting due to the RTP at temperatures higher than 580 °C compared to RTP at temperatures lower than 580 °C, where solid‐state reactions took place.
Skip Nav Destination
Article navigation
Research Article|
May 01 1989
Metal/Al/Si contacts formed by eutectic rapid thermal melting
A. Katz;
A. Katz
Department of Materials Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel
Search for other works by this author on:
Y. Komem
Y. Komem
Department of Materials Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel
Search for other works by this author on:
J. Vac. Sci. Technol. A 7, 1484–1487 (1989)
Article history
Received:
August 23 1988
Accepted:
October 17 1988
Citation
A. Katz, Y. Komem; Metal/Al/Si contacts formed by eutectic rapid thermal melting. J. Vac. Sci. Technol. A 1 May 1989; 7 (3): 1484–1487. https://doi.org/10.1116/1.576082
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Could not validate captcha. Please try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Comment on ‘‘Ion mixing of metal/Al bilayers near 77 K’’ [Appl. Phys. Lett. 5 4 , 413 (1989)]
Appl. Phys. Lett. (July 1989)
Variations in interface compound nucleation for Ti‐Al ultrathin films on Si substrates
Appl. Phys. Lett. (November 1985)
The microstructure and electrical properties of contacts formed in the Ti/Al/Si system due to rapid thermal processing
Journal of Applied Physics (March 1990)
Investigation of the Al/TiSi2/Si contact system
Journal of Applied Physics (February 1983)
Stability and epitaxy of NiAl and related intermetallic films on III‐V compound semiconductors
Appl. Phys. Lett. (January 1988)