Molybdenum disilicide films have been sputtered onto sapphire and silicon substrates with a wide range of grain sizes achieved by postdeposition vacuum anneals at temperatures ranging between 200 and 1000 °C. Grain size of each film is determined by measurement of the breadth of observed x‐ray diffraction peaks. Electrical resistivity as a function of temperature and room‐temperature Hall effect has been measured for each film. Transport properties are related to grain size using scattering models developed for polycrystalline metals. A close fit to theory is obtained.
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Research Article| May 01 1989
Transport properties of sputtered molybdenum silicide thin films as a function of grain size
T. P. Thorpe;
A. A. Morrish;
T. P. Thorpe, A. A. Morrish, S. B. Qadri; Transport properties of sputtered molybdenum silicide thin films as a function of grain size. J. Vac. Sci. Technol. A 1 May 1989; 7 (3): 1279–1281. https://doi.org/10.1116/1.576269
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