As a step toward growth of HgCdTe on GaAs and GaAs/Si substrates, Cd1–yZnyTe buffer layers were grown on these substrates. A conventional pyrolytic process at relatively high temperature (441 °C) was used. Epitaxial growth on GaAs was achieved for all alloy compositions, 0≤y≤1. The solid–vapor distribution curve for alloy deposition was determined experimentally for one particular set of deposition parameters, and compared with a thermodynamic model. Deposit uniformity was also studied experimentally and compared with a model incorporating coupled fluid dynamics and mass transport (but not chemical kinetics) with realistic reactor boundary conditions and thermal effects. Epitaxial growth on the GaAs(123) substrates orientation was studied by x‐ray techniques. Cd1–yZnyTe epitaxial layers grown on these substrates were tilted with respect to the substrate toward 〈111〉, about a 〈12̄1〉 axis. The degree of tilt depended on the alloy composition y, ranging from 1.7° for y=1 to 3.2° for y=0. These results are consistent with a model of the GaAs(123) surface as a terraced structure consisting of (111) oriented ledges and steps parallel to [12̄1]. The crystal lattice perfection of the epitaxial layers was assessed by x‐ray double‐crystal rocking curve analysis. The best full width at half‐maximum (FWHM) obtained for CdTe layers was 80 arc s, and for ZnTe layers it was 150 arc s. Cd0.96Zn0.04Te layers also grown on GaAs/Si(001) tilted 3.5° toward 〈111〉. Some layers grown on these substrates also had rocking curve FWHM≤100 arc s. Hg0.7Cd0.3Te was grown by liquid phase epitaxy on a CdZnTe/GaAs/Si substrate, and the resulting layer had a rocking curve FWHM of 165 arc s.
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March 1989
Research Article|
March 01 1989
Metalorganic chemical vapor deposition growth of Cd1−yZnyTe epitaxial layers on GaAs and GaAs/Si substrates
W. L. Ahlgren;
W. L. Ahlgren
Santa Barbara Research Center, Goleta, California 93117
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S. M. Johnson;
S. M. Johnson
Santa Barbara Research Center, Goleta, California 93117
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E. J. Smith;
E. J. Smith
Santa Barbara Research Center, Goleta, California 93117
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R. P. Ruth;
R. P. Ruth
Santa Barbara Research Center, Goleta, California 93117
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B. C. Johnston;
B. C. Johnston
Santa Barbara Research Center, Goleta, California 93117
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M. H. Kalisher;
M. H. Kalisher
Santa Barbara Research Center, Goleta, California 93117
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C. A. Cockrum;
C. A. Cockrum
Santa Barbara Research Center, Goleta, California 93117
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T. W. James;
T. W. James
Santa Barbara Research Center, Goleta, California 93117
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D. L. Arney;
D. L. Arney
Santa Barbara Research Center, Goleta, California 93117
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C. K. Ziegler;
C. K. Ziegler
University of California, Santa Barbara, California 93117
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W. Lick
W. Lick
University of California, Santa Barbara, California 93117
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W. L. Ahlgren
S. M. Johnson
E. J. Smith
R. P. Ruth
B. C. Johnston
M. H. Kalisher
C. A. Cockrum
T. W. James
D. L. Arney
C. K. Ziegler
W. Lick
Santa Barbara Research Center, Goleta, California 93117
J. Vac. Sci. Technol. A 7, 331–337 (1989)
Article history
Received:
October 11 1988
Accepted:
November 13 1988
Citation
W. L. Ahlgren, S. M. Johnson, E. J. Smith, R. P. Ruth, B. C. Johnston, M. H. Kalisher, C. A. Cockrum, T. W. James, D. L. Arney, C. K. Ziegler, W. Lick; Metalorganic chemical vapor deposition growth of Cd1−yZnyTe epitaxial layers on GaAs and GaAs/Si substrates. J. Vac. Sci. Technol. A 1 March 1989; 7 (2): 331–337. https://doi.org/10.1116/1.576098
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