High‐resolution electron energy‐loss spectroscopy has been used to study surface phonon and surface plasmon excitations of GaAs (100). The angular dispersion (energy loss versus electron beam incidence angle) of Fuchs–Kliewer surface optical phonons and free‐carrier surface plasmons of GaAs(100) have been determined with an experimental resolution of 10 meV. Theoretical dispersion relations were calculated for these samples using the Lindhard dielectric function and assuming that only the surface loss function is measured. Phonon loss and gain peaks were observed which decreased in intensity with increasing momentum parallel to the surface q∥, as expected for dipole selection rules. The plasmon loss features seemed to decrease less rapidly with q∥ than the phonon peaks. Experimental peaks positions are described reasonably well by the two coupled modes that result from the theoretical model with an effective surface carrier density of 6×1018 cm−3 which is (1)/(3) that of the bulk.
Skip Nav Destination
,
,
,
Article navigation
May 1988
Research Article|
May 01 1988
Angular dispersion of Fuchs–Kliewer modes on GaAs(100) by digital high‐resolution electron energy‐loss spectroscopy
D. S. Black;
D. S. Black
Department of Physics, University of Florida, Gainesville, Florida 32611
Search for other works by this author on:
J. M. Seo;
J. M. Seo
Department of Physics, University of Florida, Gainesville, Florida 32611
Search for other works by this author on:
P. H. Holloway;
P. H. Holloway
Department of Physics, University of Florida, Gainesville, Florida 32611
Search for other works by this author on:
J. E. Rowe
J. E. Rowe
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Search for other works by this author on:
D. S. Black
J. M. Seo
P. H. Holloway
J. E. Rowe
Department of Physics, University of Florida, Gainesville, Florida 32611
J. Vac. Sci. Technol. A 6, 1519–1522 (1988)
Article history
Received:
October 23 1987
Accepted:
January 11 1988
Citation
D. S. Black, J. M. Seo, P. H. Holloway, J. E. Rowe; Angular dispersion of Fuchs–Kliewer modes on GaAs(100) by digital high‐resolution electron energy‐loss spectroscopy. J. Vac. Sci. Technol. A 1 May 1988; 6 (3): 1519–1522. https://doi.org/10.1116/1.575353
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy
Tiffany C. Kaspar, Sarah Akers, et al.
Recent trends in thermal atomic layer deposition chemistry
Georgi Popov, Miika Mattinen, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Related Content
Deconvolution of the Co 3 O 4 ( 110 ) Fuchs–Kliewer phonon spectrum
J. Vac. Sci. Technol. A (June 2005)
Fuchs-Kliewer surface phonon and optical function of InGaAs alloy
AIP Conf. Proc. (September 2012)
Fuchs-Kliewer Phonon Spectrum of Co3O4(110) by High Resolution Electron Energy Loss Spectroscopy
Surf. Sci. Spectra (July 2005)
CoO(100) and CoO(100)/Co3O4 Fuchs-Kliewer Phonon Spectra
Surf. Sci. Spectra (July 1998)
Fuchs-Kliewer HREEL Phonon Spectrum of Single Crystal NiO(100) and of Ni(100)/NiO(111) and Ni(100)/NiO(100) Thin Films
Surf. Sci. Spectra (July 1998)