Summary Abstract: a‐Si:H/a‐SiOx:H and a‐Si:H/a‐SiNx:H interface formation studied by photoemission and soft x‐ray absorption

Eberhardt, W.; Abeles, B.; Fu, Z.; Stasiewski, H.; Yang, L.; Sondericker, D.

doi:10.1116/1.575706

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Dissertation| May 01 1988

Summary Abstract: a‐Si:H/a‐SiO_x:H and a‐Si:H/a‐SiN_x:H interface formation studied by photoemission and soft x‐ray absorption

W. Eberhardt;

W. Eberhardt

Exxon Research and Engineering Company, Annandale, New Jersey 08801

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B. Abeles;

B. Abeles

Exxon Research and Engineering Company, Annandale, New Jersey 08801

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Z. Fu;

Z. Fu

Exxon Research and Engineering Company, Annandale, New Jersey 08801

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H. Stasiewski;

H. Stasiewski

Exxon Research and Engineering Company, Annandale, New Jersey 08801

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L. Yang;

L. Yang

Exxon Research and Engineering Company, Annandale, New Jersey 08801

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D. Sondericker

NSLS, Brookhaven National Laboratory, Upton, New York 11973

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J. Vac. Sci. Technol. A 6, 1376–1377 (1988)

https://doi.org/10.1116/1.575706

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Summary Abstract: a‐Si:H/a‐SiO_x:H and a‐Si:H/a‐SiN_x:H interface formation studied by photoemission and soft x‐ray absorption

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Summary Abstract: a‐Si:H/a‐SiOx:H and a‐Si:H/a‐SiNx:H interface formation studied by photoemission and soft x‐ray absorption

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Summary Abstract: a‐Si:H/a‐SiO_x:H and a‐Si:H/a‐SiN_x:H interface formation studied by photoemission and soft x‐ray absorption