The purpose of this Recommended Practice is to familiarize users with the issues involved with processes using toxic, flammable, or corrosive gases for the deposition or etching of semiconducting, metallic, or insulating films. We examine the general concerns for handling these gases, discuss the nature of several processes, their effluents, reactivity with pump fluids, and how to scrub noxious gases from the exhaust. We describe some specific concerns that relate to materials, components, and facilities layout which result from technical, safety, and regulatory obligations. As an aid in making these concerns clear, we have considered the design of seven different systems that use corrosive, flammable, pyrophoric, or toxic gases. We give examples of a plasma etch system, deposition systems for tungsten silicide, borophosphosilicate glass, amorphous silicon, and silicon nitride, an organometallic deposition system, and finally an ion implantation system. We are keenly aware that design, process, and safety considerations vary throughout the industry. We are not attempting to standardize or claim that the techniques presented here are the only techniques which are acceptable. We are trying to point out some well‐known hazards and recommend procedures which, to the best of our knowledge, are reliable, and to urge people to think through the entire process of design, construction, and operation very carefully. The final decision on how a facility is to be designed, constructed, and operated can only be made by the responsible management and facility safety officers.
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Research Article| May 01 1988
American Vacuum Society recommended practices for pumping hazardous gases
John F. O’Hanlon;
John F. O’Hanlon, David B. Fraser; American Vacuum Society recommended practices for pumping hazardous gases. J. Vac. Sci. Technol. A 1 May 1988; 6 (3): 1226–1254. https://doi.org/10.1116/1.575683
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