Electrical measurements of molecular‐beam epitaxy HgTe–CdTe superlattices and absorption coefficient analysis of molecular‐beam epitaxy HgTe Available to Purchase

Transport properties of molecular‐beam epitaxy (MBE) grown HgTe and HgTe–CdTe superlattices on (112) CdTe substrates and the absorption coefficient for MBE HgTe are measured. The Hall and optical data for HgTe agree with a Kane‐type band‐structure model with parameters appropriate for HgTe. The Hall data for the HgTe–CdTe superlattices indicate that the superlattices are p‐type with an n–p transition temperature which can be used to determine the band gap. The Hall data are modeled fairly well using simple band‐structure calculations. Measurements of the Shubnikov–de Haas effect indicate that light‐hole‐like carriers (m*∼0.01 m₀) exist in the p‐type conduction range of these samples. This is in disagreement with the Hall data which suggest that the predominate carriers in this conduction range are heavy holes (m*∼0.4 m₀).