Recent advances in the epitaxial growth of various d‐metal silicides on Si(111) are reviewed. The growth mechanisms, the structural, and electronic properties of epitaxial silicides are described. In situ surface techniques such as low‐energy electron diffraction, Auger electron spectroscopy, x‐ray induced photoemission spectroscopy, ultraviolet photoemission spectroscopy, extended energy‐loss fine structure, electron energy‐loss near edge spectroscopy, and ex situ techniques such as Rutherford backscattering, cross‐section transmission electron microscopy, and deep‐level transient spectroscopy have been used to study the special case of quasiperfect ultrathin films of CoSi2 on Si(111). Physical factors affecting the CoSi2 epitaxy are discussed. The role of CoSi2 film in metal base and permeable base transistors is also addressed.
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Research Article| July 01 1987
Thin metallic silicide films epitaxially grown on Si(111) and their role in Si–metal–Si devices
Centre National de la Recherche Scientifique, Laboratoire d’Etudes des Propriétés Electroniques des Solides, associated with Université Scientifique, Technologique, et Médicale de Grenoble, B.P. 166, 38042 Grenoble Cedex, France
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J. Derrien, F. Arnaud d’Avitaya; Thin metallic silicide films epitaxially grown on Si(111) and their role in Si–metal–Si devices. J. Vac. Sci. Technol. A 1 July 1987; 5 (4): 2111–2120. https://doi.org/10.1116/1.574931
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