The electronic structure of chemical vapor deposition grown SiC(100) has been investigated with synchrotron radiation by angular resolved valence‐band photoemission spectroscopy. SiC grown on n‐type Si substrates was also n type with a Fermi level pinned at ∼2.0 eV above the Γ15 valence‐band maximum. The band structure mapped along ΓX is in good agreement with theoretical predictions. A surface sensitive structure, which was nondispersive with k⊥, has been identified at ∼1.0 eV below EF. The initial reaction of Si(100) with propane at 1400 K resulted in C 2s emission at ∼7.5‐eV binding energy. This emission indicates that the first reaction steps at the surface may lead to carbon bands which are typical for a ‘‘graphitic’’ material rather than a carbide. The emission of the C 2s level of SiC appears at ∼10‐eV binding energy.
The electronic structure of cubic SiC grown by chemical vapor deposition on Si(100)
Hartmut Hoechst, Ming Tang, B. C. Johnson, J. M. Meese, G. W. Zajac, T. H. Fleisch; The electronic structure of cubic SiC grown by chemical vapor deposition on Si(100). J. Vac. Sci. Technol. A 1 July 1987; 5 (4): 1640–1643. https://doi.org/10.1116/1.574537
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