Sputtered neutral mass spectrometry is shown to be a very sensitive, depth‐differential technique for the analysis of helium in solids. Detection limits in nickel are some 10 ppm for near‐surface He distributions and can be lowered to a few ppm if extreme depth resolution is not important. Range parameters of 4He in Ni and Si agree very well with theoretical data. Quantitative evaluation of He concentrations with an accuracy of 4% can be done by producing an internal standard via insitu ion implantation.

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