100 μm diameter Schottky and heterojunction vertical Ga2O3 rectifiers were fabricated on ∼10 μm thick drift layers grown on 4-in. diameter bulk Ga2O3 substrates. The uniformity of breakdown voltage was measured on 50 heterojunction devices over a quadrant of the wafer and showed variations from 2 to 8.5 kV, with the higher range correlating with thicker drift layers and lower background doping levels. The median breakdown voltage was ∼6 kV in this area and ∼3 kV in the areas with thinner drift layers and higher doping levels. By contrast, Schottky rectifier breakdown voltages were 0.7–1.8 kV. The minimum on-resistances were in the range of 4–7 mΩ cm2 for Schottky barrier diodes and 5–9 mΩ cm2 for heterojunction diodes, with on-voltages of 0.6–0.75 V for the former and 1.7–1.75 for the latter. The results show the promise of large diameter Ga2O3 substrates in providing high numbers of kV-class rectifiers for electric vehicle charging and other applications.
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January 2025
Research Article|
December 02 2024
kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates
Special Collection:
Gallium Oxide Materials and Devices
Jian-Sian Li
;
Jian-Sian Li
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Writing – original draft, Writing – review & editing)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32611
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Chao-Ching Chiang
;
Chao-Ching Chiang
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Writing – original draft, Writing – review & editing)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32611
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Hsiao-Hsuan Wan
;
Hsiao-Hsuan Wan
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Writing – original draft, Writing – review & editing)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32611
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Fan Ren
;
Fan Ren
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Writing – original draft, Writing – review & editing)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32611
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Yu-Te Liao
;
Yu-Te Liao
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Writing – original draft, Writing – review & editing)
2
Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University
, Hsinchu 30010, Taiwan
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Stephen J. Pearton
Stephen J. Pearton
a)
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Writing – original draft, Writing – review & editing)
3
Department of Materials Science and Engineering, University of Florida
, Gainesville, Florida 32611
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a)
Electronic mail: [email protected]
J. Vac. Sci. Technol. A 43, 012701 (2025)
Article history
Received:
October 11 2024
Accepted:
November 08 2024
Citation
Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Yu-Te Liao, Stephen J. Pearton; kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates. J. Vac. Sci. Technol. A 1 January 2025; 43 (1): 012701. https://doi.org/10.1116/6.0004141
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