This study examines the electrical properties and material characteristics of hafnium zirconium oxide thin films under various annealing and etching processes. High-pressure annealing is shown to significantly enhance the orthorhombic phase fraction, reaching 42% at 700 °C, with supercritical fluids treatment further increasing this to 46%. The impact of atomic layer etching and reactive ion etching on surface roughness is also analyzed, revealing increases of approximately 3.5 and 7 Å, respectively, which are mitigated by subsequent rapid thermal annealing. Additionally, high-pressure annealed capacitors exhibit a reduction in leakage current density from 10−7 to 10−9 A/cm2 and an increase in remnant polarization from 14 to 18 μC/cm2. Transmission electron microscopy and x-ray photoelectron spectroscopy confirm these processes’ significant impact on the structure and performance, highlighting their value for future high-performance electronic devices.

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