Switching of vertical 6.1 kV/4A NiO/Ga2O3 rectifiers from voltages up to 1.45 kV showed reverse recovery times of 75 ns, current slew rate of 39.0 A/μs, and energy loss of ∼105 μW. These are the highest switching voltages reported for Ga2O3 rectifiers. To place the results in context, commercial 3.3 kV/5 A SiC merged PiN Schottky diodes showed reverse recovery times of 20 ns, current slew rate of 47.5 A/μs, and energy loss of ∼67 μW. The validity of comparing unpackaged experimental Ga2O3 diodes with commercial Si or SiC diodes without considering their differences in chip size and consequently in capacitive charge and ON-resistance is restricted. However, the results show the rapid progress in these devices when compared to commercial SiC rectifiers.
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