SiC is an indirect bandgap semiconductor with material properties ideal for power electronics but not so much as an optical emitter. Meanwhile, gallium arsenide (GaAs) is a material known for high-performance optical devices due to its direct bandgap and carrier lifetime. Integrating GaAs with silicon carbide (SiC) can result in the best of both materials. However, integrating the two presents a significant challenge due to the large lattice mismatch between the two materials. In this paper, we investigate the growth of high-quality GaAs directly on 4H-SiC and on AlAs/4H-SiC substrates. The thin films were characterized using key techniques for structural and optical analyses, such as x-ray diffraction, atomic force microscopy, and photoluminescence (PL) spectroscopy. The 3D-island nature of growth of GaAs directly on SiC results in weak in-plane correlation with the substrate but high photoluminescence. This was demonstrated with an observed PL intensity comparable to the PL observed from a GaAs substrate with a similar buffer layer. Introduction of a thin AlAs nucleation layer results in improved wetting of the substrate, better in-plane correlation with substrate, and overall improved crystalline quality and is now under further study.
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July 2024
Research Article|
May 06 2024
Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Special Collection:
Molecular Beam Epitaxy
Subhashis Das
;
Subhashis Das
a)
(Conceptualization, Investigation, Methodology, Validation, Visualization, Writing – original draft)
1
Institute for Nanoscience and Engineering, University of Arkansas
, Fayetteville, Arkansas 727012
Department of Physics, University of Arkansas
, Fayetteville, Arkansas 72701a)Author to whom correspondence should be addressed: [email protected]
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Nirosh M. Eldose
;
Nirosh M. Eldose
(Data curation, Formal analysis, Investigation)
1
Institute for Nanoscience and Engineering, University of Arkansas
, Fayetteville, Arkansas 72701
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Hryhorii Stanchu
;
Hryhorii Stanchu
(Data curation, Formal analysis, Resources, Writing – review & editing)
1
Institute for Nanoscience and Engineering, University of Arkansas
, Fayetteville, Arkansas 72701
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Fernando Maia de Oliveira
;
Fernando Maia de Oliveira
(Data curation, Formal analysis, Resources, Writing – review & editing)
1
Institute for Nanoscience and Engineering, University of Arkansas
, Fayetteville, Arkansas 72701
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Mourad Benamara
;
Mourad Benamara
(Data curation, Formal analysis)
1
Institute for Nanoscience and Engineering, University of Arkansas
, Fayetteville, Arkansas 72701
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Yuriy I. Mazur
;
Yuriy I. Mazur
(Data curation, Methodology, Project administration)
1
Institute for Nanoscience and Engineering, University of Arkansas
, Fayetteville, Arkansas 72701
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Zhong Chen
;
Zhong Chen
(Project administration)
3
Department of Electrical Engineering, University of Arkansas
, Fayetteville, Arkansas 72701
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Alan Mantooth
;
Alan Mantooth
(Funding acquisition, Project administration)
3
Department of Electrical Engineering, University of Arkansas
, Fayetteville, Arkansas 72701
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Gregory J. Salamo
Gregory J. Salamo
(Conceptualization, Formal analysis, Funding acquisition, Investigation, Project administration, Supervision, Validation, Visualization, Writing – review & editing)
1
Institute for Nanoscience and Engineering, University of Arkansas
, Fayetteville, Arkansas 727012
Department of Physics, University of Arkansas
, Fayetteville, Arkansas 72701
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a)Author to whom correspondence should be addressed: [email protected]
J. Vac. Sci. Technol. A 42, 042702 (2024)
Article history
Received:
January 15 2024
Accepted:
April 15 2024
Citation
Subhashis Das, Nirosh M. Eldose, Hryhorii Stanchu, Fernando Maia de Oliveira, Mourad Benamara, Yuriy I. Mazur, Zhong Chen, Alan Mantooth, Gregory J. Salamo; Epitaxial growth and characterization of GaAs (111) on 4H-SiC. J. Vac. Sci. Technol. A 1 July 2024; 42 (4): 042702. https://doi.org/10.1116/6.0003454
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