InGaAs/GaAsSb “W” quantum wells with GaAsP barriers are grown on GaAs (001) substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in GaAsSb on the photoluminescence (PL) wavelength. X-ray rocking curve (XRC) measurements and simulations are performed to investigate the material composition and layer thickness. Low-temperature PL spectra are consistent with the XRC results. At the lowest Sb composition of 6%, the PL intensity is the strongest, and room-temperature PL is realized at ∼1100 nm. By increasing the Sb composition in the GaAsSb layer, low-temperature (20 K) PL emits at longer wavelength up to ∼1400 nm at 21% Sb while the PL intensity is the weakest. The XRC is also degraded. The strained bandgap simulation reveals the type-I to type-II band alignment transition as the Sb composition is ≥9%.
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Research Article|
April 19 2024
Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates
Special Collection:
Molecular Beam Epitaxy
Zon
;
Zon
a)
(Data curation, Formal analysis, Investigation, Methodology, Software, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
Department of Electrical Engineering, National Chung Hsing University
, Taichung, Taiwan
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Tzu-Wei Lo;
Tzu-Wei Lo
(Formal analysis, Investigation, Software)
1
Department of Electrical Engineering, National Chung Hsing University
, Taichung, Taiwan
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Zhen-Lun Li;
Zhen-Lun Li
(Formal analysis, Investigation, Software)
1
Department of Electrical Engineering, National Chung Hsing University
, Taichung, Taiwan
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Samatcha Vorathamrong;
Samatcha Vorathamrong
(Investigation)
1
Department of Electrical Engineering, National Chung Hsing University
, Taichung, Taiwan
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Chao-Chia Cheng;
Chao-Chia Cheng
(Resources, Supervision)
2
Department of Physics, National Central University
, Chung-Li, Taoyuan, Taiwan
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Chun-Nien Liu
;
Chun-Nien Liu
(Funding acquisition, Software, Supervision)
1
Department of Electrical Engineering, National Chung Hsing University
, Taichung, Taiwan
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Chun-Te Chiang;
Chun-Te Chiang
(Data curation)
3
Epileds Co., Ltd.
, Tainan, Taiwan
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Li-Wei Hung;
Li-Wei Hung
(Funding acquisition, Resources)
3
Epileds Co., Ltd.
, Tainan, Taiwan
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Ming-Sen Hsu;
Ming-Sen Hsu
(Funding acquisition, Resources)
3
Epileds Co., Ltd.
, Tainan, Taiwan
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Wei-Sheng Liu
;
Wei-Sheng Liu
(Methodology, Resources, Supervision)
4
Department of Electrical Engineering, Yuan Ze University
, Chung-Li, Taoyuan, Taiwan
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Jen-Inn Chyi
;
Jen-Inn Chyi
(Methodology, Resources, Supervision)
5
Department of Electrical Engineering, National Central University
, Chung-Li, Taoyuan, Taiwan
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Charles W. Tu
Charles W. Tu
b)
(Conceptualization, Funding acquisition, Methodology, Project administration, Resources, Supervision, Validation, Writing – review & editing)
1
Department of Electrical Engineering, National Chung Hsing University
, Taichung, Taiwan
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a)
Electronic mail: zon@dragon.nchu.edu.tw
b)
Electronic mail: ctu@ucsd.edu
J. Vac. Sci. Technol. A 42, 032709 (2024)
Article history
Received:
January 31 2024
Accepted:
April 01 2024
Citation
Zon, Tzu-Wei Lo, Zhen-Lun Li, Samatcha Vorathamrong, Chao-Chia Cheng, Chun-Nien Liu, Chun-Te Chiang, Li-Wei Hung, Ming-Sen Hsu, Wei-Sheng Liu, Jen-Inn Chyi, Charles W. Tu; Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates. J. Vac. Sci. Technol. A 1 May 2024; 42 (3): 032709. https://doi.org/10.1116/6.0003501
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