Novel 3D reciprocal space visualization of strain relaxation in InSb on GaAs substrates

This study introduces the reciprocal space polar visualization (RSPV) method, a novel approach for visualizing x-ray diffraction-based reciprocal space data. RSPV allows for the precise separation of tilt and strain, facilitating their individual analysis. InSb was grown by molecular beam epitaxy on two (001) GaAs substrates—one with no misorientation (sample A) and one with 2 $°$ surface misorientation from the (001) planes (sample B). There is a substantial lattice mismatch with the substrate, and this results in the generation of defects within the InSb layer during growth. To demonstrate RSPV’s effectiveness, a comprehensive comparison of surface morphology, dislocation density, strain, and tilt was conducted. RSPV revealed previously unobserved features of the 004 InSb Bragg peak, partially explained by the presence of threading dislocations and oriented abrupt steps. Surface morphologies examined by an atomic force microscope revealed that sample B had significantly lower root mean square roughness. Independent estimates of threading dislocation density (TDD) using x-ray diffraction (XRD) and electron channelling contrast imaging confirmed that sample B exhibited a significantly lower TDD than sample A. XRD methods further revealed unequal amounts of $α$- and $β$-type threading dislocations in both samples, contributing to an anisotropic Bragg peak. RSPV is shown to be a robust method for exploring 3D reciprocal space in any crystal, demonstrating that growing InSb on misoriented GaAs produced a higher-quality crystal compared to an on-orientation substrate.