For studying the damage tolerance of thin films, a novel randomly distributed nano-scratch test method was introduced and demonstrated as a promising characterization method. It is capable of more closely simulating the damage progression in abrasion, where material removal can be influenced by the interaction between damage produced by previous scratches in close proximity. In addition to studying how localized failure events affect subsequent damage progression, it is possible to monitor the evolution of the film degradation cycle-by-cycle using the mean depth and friction over the scratch. Randomly distributed nano-scratch tests were performed on the high entropy alloy AlFeMnNb, AlFeMnNi, and nanocomposite (nc-) TiN/Si3N4 thin films on silicon. Brittle fracture and film removal with extensive chipping of the Si substrate were observed over the entire scratched region on AlFeMnNi and nc-TiN/Si3N4 in distributed scratch tests at applied loads that were only ∼0.2–0.3 of the load needed to produce the chipping in ramped load nano-scratch tests due to film and substrate fatigue. In contrast, the softer AlFeMnNb deformed predominantly by ductile ploughing with significantly improved damage tolerance and crack resistance in the distributed scratch tests. The new method can be used to evaluate the performance of thin films in applications where they can be exposed to abrasive/sliding wear. It can provide a more direct measure of abrasion resistance than assuming high resistance to abrasive wear from coating hardness. In the thin film systems studied, higher hardness was associated with greater fracture and delamination in the distributed scratch tests.
Skip Nav Destination
Article navigation
January 2024
Research Article|
January 05 2024
Statistically distributed nano-scratch testing of AlFeMnNb, AlFeMnNi, and TiN/Si3N4 thin films on silicon
Special Collection:
Celebrating the Achievements and Life of Joe Greene
Ben D. Beake
;
Ben D. Beake
a)
(Conceptualization, Funding acquisition, Investigation, Methodology, Supervision, Writing – original draft, Writing – review & editing)
1
Micro Materials Ltd
, Willow House, Yale Business Village, Ellice Way, Wrexham LL13 7YL, United Kingdom
a)Author to whom correspondence should be addressed: ben.beake@micromaterials.co.uk
Search for other works by this author on:
Vladimir M. Vishnyakov
;
Vladimir M. Vishnyakov
(Conceptualization, Investigation, Methodology, Writing – review & editing)
2
Institute for Materials Research, University of Huddersfield
, Queensgate HD1 3DH, United Kingdom
Search for other works by this author on:
Stephen R. Goodes
;
Stephen R. Goodes
(Conceptualization, Methodology, Software, Supervision, Writing – review & editing)
1
Micro Materials Ltd
, Willow House, Yale Business Village, Ellice Way, Wrexham LL13 7YL, United Kingdom
Search for other works by this author on:
Azadeh Taher Rahmati
Azadeh Taher Rahmati
(Investigation, Methodology, Writing – review & editing)
3
John Dalton Building, Faculty of Science and Engineering, Manchester Metropolitan University
, Chester Street, Manchester M15 6BH, United Kingdom
Search for other works by this author on:
a)Author to whom correspondence should be addressed: ben.beake@micromaterials.co.uk
J. Vac. Sci. Technol. A 42, 013104 (2024)
Article history
Received:
October 02 2023
Accepted:
November 28 2023
Citation
Ben D. Beake, Vladimir M. Vishnyakov, Stephen R. Goodes, Azadeh Taher Rahmati; Statistically distributed nano-scratch testing of AlFeMnNb, AlFeMnNi, and TiN/Si3N4 thin films on silicon. J. Vac. Sci. Technol. A 1 January 2024; 42 (1): 013104. https://doi.org/10.1116/6.0003189
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Many routes to ferroelectric HfO2: A review of current deposition methods
Hanan Alexandra Hsain, Younghwan Lee, et al.
Observation of an abrupt 3D-2D morphological transition in thin Al layers grown by MBE on InGaAs surface
A. Elbaroudy, B. Khromets, et al.