Nanostructuring via ion beam irradiation on Ge substrates can be activated by ion beam sputtering and self-organization of point defects (SPDs). For evaluating the mechanism by which these formation factors compete, we studied nanostructuring on Ge substrates subjected to sputtering-dominant conditions, viz., the low-energy ion incidence. A focused ion beam was used for nanostructuring and adjusting an angle of ion incidence to the surface normal range of 0°–60°. The ions accelerated for irradiation were Ga+ with an incident energy of 5–30 keV, and the fluence and beam current were 1 × 1020–1 × 1022 ions/m2 and 0.5–16.7 nA, respectively. Based on the results of serial experiments, the incident energy of 5 keV can be the threshold for the activation of nanostructuring by SPD.
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November 2023
Research Article|
September 05 2023
Competition between ion beam sputtering and self-organization of point defects for surface nanostructuring on germanium Available to Purchase
Naoto Oishi
;
Naoto Oishi
a)
(Data curation, Investigation, Writing – original draft, Writing – review & editing)
1
School of Engineering Science, Kochi University of Technology
, Tosayamada, Kami, Kochi 782-8502, Japan
a)Author to whom correspondence should be addressed: [email protected]
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Tatsuya Yasuoka
;
Tatsuya Yasuoka
(Data curation, Investigation, Writing – original draft, Writing – review & editing)
2
School of Systems Engineering, Kochi University of Technology
, Tosayamada, Kami, Kochi 782-8502, Japan
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Toshiyuki Kawaharamura;
Toshiyuki Kawaharamura
(Writing – original draft, Writing – review & editing)
2
School of Systems Engineering, Kochi University of Technology
, Tosayamada, Kami, Kochi 782-8502, Japan
3
Center for Nanotechnology, Research Institute, Kochi University of Technology
, Tosayamada, Kami, Kochi 782-8502, Japan
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Noriko Nitta
Noriko Nitta
(Data curation, Investigation, Writing – original draft, Writing – review & editing)
1
School of Engineering Science, Kochi University of Technology
, Tosayamada, Kami, Kochi 782-8502, Japan
3
Center for Nanotechnology, Research Institute, Kochi University of Technology
, Tosayamada, Kami, Kochi 782-8502, Japan
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Naoto Oishi
1,a)
Tatsuya Yasuoka
2
Toshiyuki Kawaharamura
2,3
Noriko Nitta
1,3
1
School of Engineering Science, Kochi University of Technology
, Tosayamada, Kami, Kochi 782-8502, Japan
2
School of Systems Engineering, Kochi University of Technology
, Tosayamada, Kami, Kochi 782-8502, Japan
3
Center for Nanotechnology, Research Institute, Kochi University of Technology
, Tosayamada, Kami, Kochi 782-8502, Japan
a)Author to whom correspondence should be addressed: [email protected]
J. Vac. Sci. Technol. A 41, 063101 (2023)
Article history
Received:
June 07 2023
Accepted:
August 04 2023
Citation
Naoto Oishi, Tatsuya Yasuoka, Toshiyuki Kawaharamura, Noriko Nitta; Competition between ion beam sputtering and self-organization of point defects for surface nanostructuring on germanium. J. Vac. Sci. Technol. A 1 November 2023; 41 (6): 063101. https://doi.org/10.1116/6.0002878
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