Simulation studies of floating field plate in β-Ga₂O₃ power devices and modules

In this work, we present the floating field plate (FFP) that a novel structure modulates the electric field in beta gallium oxide (β-Ga₂O₃) power devices and integrated circuit modules. By reducing the peak electric field during reverse high-voltage operation, the FFP improves the device's performance while maintaining its forward characteristics. Compared with the traditional field plate structure, the FFP increases the power figure of merit by 34.9% with the same device parameters and reduces the dielectric material requirement by 52% as the same device blocking voltage. We also establish a relationship between different dielectric materials (SiO₂, Al₂O₃, Si₃N₄, etc.) and the optimal structure size through simulation. More importantly, the FFP can be applied to β-Ga₂O₃ power modules and optimize the electric field distribution regionally, thereby improving the system’s robustness. This study provides a new solution for enhancing the performance of β-Ga₂O₃ devices and advancing β-Ga₂O₃ power modules.