For continual scaling in microelectronics, new processes for precise high volume fabrication are required. Area-selective atomic layer deposition (ASALD) can provide an avenue for self-aligned material patterning and offers an approach to correct edge placement errors commonly found in top-down patterning processes. Two-dimensional transition metal dichalcogenides also offer great potential in scaled microelectronic devices due to their high mobilities and few-atom thickness. In this work, we report ASALD of MoS2 thin films by deposition with MoF6 and H2S precursor reactants. The inherent selectivity of the MoS2 atomic layer deposition (ALD) process is demonstrated by growth on common dielectric materials in contrast to thermal oxide/ nitride substrates. The selective deposition produced few layer MoS2 films on patterned growth regions as measured by Raman spectroscopy and time-of-flight secondary ion mass spectrometry. We additionally demonstrate that the selectivity can be enhanced by implementing atomic layer etching (ALE) steps at regular intervals during MoS2 growth. This area-selective ALD process provides an approach for integrating 2D films into next-generation devices by leveraging the inherent differences in surface chemistries and providing insight into the effectiveness of a supercycle ALD and ALE process.
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Intrinsic and atomic layer etching enhanced area-selective atomic layer deposition of molybdenum disulfide thin films
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September 2023
Research Article|
August 30 2023
Intrinsic and atomic layer etching enhanced area-selective atomic layer deposition of molybdenum disulfide thin films
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Area Selective Deposition
Jake Soares
;
Jake Soares
(Data curation, Formal analysis, Investigation, Visualization, Writing – original draft)
1
Micron School of Materials Science and Engineering, Boise State University
, 1910 University Dr., Boise, Idaho 83725
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Wesley Jen
;
Wesley Jen
(Investigation, Methodology, Writing – review & editing)
1
Micron School of Materials Science and Engineering, Boise State University
, 1910 University Dr., Boise, Idaho 83725
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John D. Hues
;
John D. Hues
(Data curation, Formal analysis, Investigation, Methodology, Visualization, Writing – review & editing)
1
Micron School of Materials Science and Engineering, Boise State University
, 1910 University Dr., Boise, Idaho 83725
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Drew Lysne
;
Drew Lysne
(Data curation, Investigation, Methodology, Project administration, Supervision, Visualization, Writing – review & editing)
1
Micron School of Materials Science and Engineering, Boise State University
, 1910 University Dr., Boise, Idaho 83725
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Jesse Wensel
;
Jesse Wensel
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Supervision, Visualization, Writing – review & editing)
2
Micron Technology
, 8000 S Federal Way, Boise, Idaho 83707
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Steven M. Hues
;
Steven M. Hues
(Data curation, Formal analysis, Investigation, Methodology, Project administration, Supervision, Writing – review & editing)
1
Micron School of Materials Science and Engineering, Boise State University
, 1910 University Dr., Boise, Idaho 83725
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Elton Graugnard
Elton Graugnard
a)
(Conceptualization, Funding acquisition, Investigation, Project administration, Resources, Supervision, Visualization, Writing – review & editing)
1
Micron School of Materials Science and Engineering, Boise State University
, 1910 University Dr., Boise, Idaho 837253
Center for Advanced Energy Studies
, Idaho Falls, Idaho 83401
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Jake Soares
1
Wesley Jen
1
John D. Hues
1
Drew Lysne
1
Jesse Wensel
2
Steven M. Hues
1
Elton Graugnard
1,3,a)
1
Micron School of Materials Science and Engineering, Boise State University
, 1910 University Dr., Boise, Idaho 83725
2
Micron Technology
, 8000 S Federal Way, Boise, Idaho 83707
3
Center for Advanced Energy Studies
, Idaho Falls, Idaho 83401a)
Electronic mail: [email protected]
J. Vac. Sci. Technol. A 41, 052404 (2023)
Article history
Received:
May 03 2023
Accepted:
July 31 2023
Citation
Jake Soares, Wesley Jen, John D. Hues, Drew Lysne, Jesse Wensel, Steven M. Hues, Elton Graugnard; Intrinsic and atomic layer etching enhanced area-selective atomic layer deposition of molybdenum disulfide thin films. J. Vac. Sci. Technol. A 1 September 2023; 41 (5): 052404. https://doi.org/10.1116/6.0002811
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