Alloying β-Ga2O3 with Al2O3 to create (AlxGa1−x)2O3 enables ultra-wide bandgap materials suitable for applications deep into ultraviolet. In this work, photoluminescence (PL) spectra of Cr3+ were investigated in monoclinic single crystal β-Ga2O3, and 10 mol. % Al2O3 alloyed with β-Ga2O3, denoted β-(Al0.1Ga0.9)2O3 or AGO. Temperature-dependent PL properties were studied for Cr3+ in AGO and β-Ga2O3 from 295 to 16 K. For both materials at room temperature, the red-line emission doublet R1 and R2 occurs at 696 nm (1.78 eV) and 690 nm (1.80 eV), respectively, along with a broad emission band at 709 nm (1.75 eV). The linewidths for AGO are larger for all temperatures due to alloy broadening. For both materials, the R-lines blue-shift with decreasing temperature. The (lowest energy) R1 line is dominant at low temperatures due to the thermal population of the levels. For temperatures above ∼50 K, however, the ratio of R2 to R1 peak areas is dominated by nonradiative combination.
Photoluminescence spectroscopy of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3
Note: This paper is part of the Special Topic Collection on Gallium Oxide Materials and Devices.
Cassandra Remple, Lauren M. Barmore, Jani Jesenovec, John S. McCloy, Matthew D. McCluskey; Photoluminescence spectroscopy of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3. J. Vac. Sci. Technol. A 1 March 2023; 41 (2): 022702. https://doi.org/10.1116/6.0002340
Download citation file: