Ultra-wide bandgap gallium oxide (∼5 eV) has emerged as a novel semiconductor platform for extending the current limits of power electronics and deep ultraviolet optoelectronics at a predicted fraction of cost. Finding effective acceptor dopant for gallium oxide is a hot issue. One element that quite often is considered as a potential candidate is zinc. A number of experimental works have reported the signature of Zn-acceptor, but the direct evidence of hole conductivity was missing. In this work, p-type Zn-doped Ga2O3 thin films were grown by the metal-organic chemical vapour deposition technique on sapphire substrates. By high-temperature Hall effect measurements, Zn related acceptor level ionization energy as 0.77 eV above the valence band maximum was determined. Additionally, we have carried out the simulation study regarding the application of the Zn:Ga2O3 semi-insulating material, to be used as a guard ring for improving the high voltage performance of the Schottky diode structure.
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July 2022
Research Article|
May 17 2022
Electrical properties of p-type Zn:Ga2O3 thin films
Special Collection:
Gallium Oxide Materials and Devices
Ekaterine Chikoidze
Kamel Boukheddaden
Yves Dumont
a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the Special Topic Collection on Gallium Oxide Materials and Devices.
J. Vac. Sci. Technol. A 40, 043401 (2022)
Article history
Received:
January 24 2022
Accepted:
April 22 2022
Citation
Ekaterine ChikoidzeCorinne SartelHayate YamanoZeyu ChiGuillaume BouchezFrançois JomardVincent SalletGérard GuillotKamel BoukheddadenAmador Pérez-TomásTamar TchelidzeYves Dumont; Electrical properties of p-type Zn:Ga2O3 thin films. J. Vac. Sci. Technol. A 1 July 2022; 40 (4): 043401. https://doi.org/10.1116/6.0001766
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