We prepared platinum nanostructures on epitaxial graphene layers (EGLs) generated via the thermal annealing of SiC(0001) substrates [Pt/EGLs/SiC(0001)], and the oxygen reduction reaction (ORR) properties were investigated. 4H_ and 6H_SiC(0001) substrates were annealed at 1600 °C in a vacuum to generate EGLs through the sublimation of Si atoms from the Si-terminated SiC(0001) substrate surfaces. Subsequently, a 1.2 nm thick Pt layer was vacuum-deposited on the EGLs/SiC(0001) surfaces at 10−8 Pa to synthesize Pt/EGLs/SiC(0001) nanostructures. Furthermore, the Pt nanostructures were fabricated separately on a 500 eV hydrogen-ion-beam (H2+-beam) irradiated EGL/6H_SiC(0001) [Pt/H2+-EGLs/SiC(0001)]. The ORR properties of the three vacuum-synthesized Pt/EGLs/SiC(0001) samples were evaluated, and the Pt/H2+-EGLs/SiC(0001) surface revealed improved electrochemical structural stability, that is, enhanced ORR durability relative to the non-H2+-irradiated Pt/EGLs/SiC(0001) surfaces.
Oxygen reduction reaction properties of vacuum-deposited Pt on thermally grown epitaxial graphene layers
Masashi Watanabe, Takafumi Kanauchi, Yoshihiro Chida, Kenta Hayashi, Naoto Todoroki, Toshimasa Wadayama; Oxygen reduction reaction properties of vacuum-deposited Pt on thermally grown epitaxial graphene layers. J. Vac. Sci. Technol. A 1 January 2022; 40 (1): 013216. https://doi.org/10.1116/6.0001379
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