The influence of the additional Ehrlich–Schwoebel step barrier and temperature on the early stages of kinetic roughening and mound formation of fcc(111) surfaces is studied by means of kinetic Monte Carlo simulations. Increasing the Ehrlich–Schwoebel barrier, the growth mode develops from nearly layer-by-layer growth to statistical (Poisson) growth mode with the formation of wedding-cake-like shaped mounds. The evolution of the growth morphology is characterized by scaling laws with effective critical exponents. On the one hand, coarsening for growth without step barrier follows exponents and for the characteristic lateral distance (coarsening exponent) and the rms roughness, respectively. On the other hand, coarsening is strongly suppressed for large step barriers (, , Poisson growth) in agreement with different experimental results, e.g., for the formation of mounds during the homoepitaxy of Ag(111) and Pt(111). The lateral roughness on short distances is governed by the low roughness exponent for all growth conditions independently of the growth mode.
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January 2022
Research Article|
December 07 2021
Step barrier effects during early stages of the kinetic roughening of fcc(111) surfaces
Special Collection:
Commemorating the Career of Pat Thiel
Joachim Wollschläger;
Joachim Wollschläger
a)
1
Department of Physics, Osnabrück University
, Barbarastr.7, D-49076 Osnabrück, Germany
a)Author to whom correspondence should be addressed:jwollsch@uos.de
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Mats I. Larsson
Mats I. Larsson
2
Department of Engineering Science, Physics and Mathematics, Karlstad University
, Universitetsgatan 1, S-65188 Karlstad, Sweden
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a)Author to whom correspondence should be addressed:jwollsch@uos.de
Note: This paper is a part of the Special Collection Commemorating the Career of Pat Thiel.
J. Vac. Sci. Technol. A 40, 013210 (2022)
Article history
Received:
August 30 2021
Accepted:
November 09 2021
Citation
Joachim Wollschläger, Mats I. Larsson; Step barrier effects during early stages of the kinetic roughening of fcc(111) surfaces. J. Vac. Sci. Technol. A 1 January 2022; 40 (1): 013210. https://doi.org/10.1116/6.0001410
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