A machine learning approach is applied to estimate film thickness from in situ spectroscopic ellipsometry data. Using the atomic layer deposition of ZnO as a model process, the ellipsometry spectra obtained contains polarization data (Ψ, Δ) as a function of wavelength. Within this dataset, 95% is used for training the machine learning algorithm, and 5% is used for thickness prediction. Five algorithms—logistic regression, support vector machine, decision tree, random forest, and k-nearest neighbors—are tested. Out of these, the k-nearest neighbor performs the best with an average thickness prediction accuracy of 88.7% to within ±1.5 nm. The prediction accuracy is found to be a function of ZnO thickness and degrades as the thickness increases. The average prediction accuracy to within ±1.5 nm remains remarkably robust even after 90% of the (Ψ, Δ) are randomly eliminated. Finally, by considering (Ψ, Δ) in a limited spectral range (271–741 nm), prediction accuracies approaching that obtained from the analysis of full spectra (271–1688 nm) can be realized. These results highlight the ability of machine learning algorithms, specifically the k-nearest neighbor, to successfully train and predict thickness from spectroscopic ellipsometry data.
Skip Nav Destination
CHORUS
Article navigation
January 2022
Research Article|
December 22 2021
Machine learning approach to thickness prediction from in situ spectroscopic ellipsometry data for atomic layer deposition processes
Special Collection:
Atomic Layer Deposition (ALD)
Ayush Arunachalam;
Ayush Arunachalam
1
Department of Electrical and Computer Engineering, The University of Texas at Dallas
, Richardson, Texas 75080
Search for other works by this author on:
S. Novia Berriel;
S. Novia Berriel
2
Department of Materials Science and Engineering, University of Central Florida
, Orlando, Florida 32816
Search for other works by this author on:
Corbin Feit;
Corbin Feit
2
Department of Materials Science and Engineering, University of Central Florida
, Orlando, Florida 32816
Search for other works by this author on:
Udit Kumar;
Udit Kumar
2
Department of Materials Science and Engineering, University of Central Florida
, Orlando, Florida 328163
Advanced Materials Processing and Analysis Center, University of Central Florida
, Orlando, Florida 32816
Search for other works by this author on:
Sudipta Seal
;
Sudipta Seal
2
Department of Materials Science and Engineering, University of Central Florida
, Orlando, Florida 328163
Advanced Materials Processing and Analysis Center, University of Central Florida
, Orlando, Florida 328164
Nano Science and Technology Center, University of Central Florida
, Orlando, Florida 328165
Biionix Faculty Cluster, College of Medicine, University of Central Florida
, Orlando, Florida 328167
College of Medicine, University of Central Florida
, Orlando, Florida 32827
Search for other works by this author on:
Kanad Basu;
Kanad Basu
a)
1
Department of Electrical and Computer Engineering, The University of Texas at Dallas
, Richardson, Texas 75080
Search for other works by this author on:
Parag Banerjee
Parag Banerjee
a)
2
Department of Materials Science and Engineering, University of Central Florida
, Orlando, Florida 328164
Nano Science and Technology Center, University of Central Florida
, Orlando, Florida 328166
Florida Solar Energy Center, University of Central Florida
, Orlando, Florida 328168
REACT Faculty Cluster, University of Central Florida
, Orlando, Florida 32816
Search for other works by this author on:
Note: This paper is part of the 2022 Special Topic Collection on Atomic Layer Deposition (ALD).
J. Vac. Sci. Technol. A 40, 012405 (2022)
Article history
Received:
September 20 2021
Accepted:
November 16 2021
Citation
Ayush Arunachalam, S. Novia Berriel, Corbin Feit, Udit Kumar, Sudipta Seal, Kanad Basu, Parag Banerjee; Machine learning approach to thickness prediction from in situ spectroscopic ellipsometry data for atomic layer deposition processes. J. Vac. Sci. Technol. A 1 January 2022; 40 (1): 012405. https://doi.org/10.1116/6.0001482
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Perspective on breakdown in Ga2O3 vertical rectifiers
Jian-Sian Li, Chao-Ching Chiang, et al.
Surface passivation approaches for silicon, germanium, and III–V semiconductors
Roel J. Theeuwes, Wilhelmus M. M. Kessels, et al.
Growth and optical properties of NiO thin films deposited by pulsed dc reactive magnetron sputtering
Faezeh A. F. Lahiji, Samiran Bairagi, et al.
Related Content
Real-time artificial intelligence enhanced defect engineering in CeO2 nanostructures
J. Vac. Sci. Technol. A (November 2023)
In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor
J. Vac. Sci. Technol. A (March 2023)
Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis(dimethylamido)titanium and water
J. Vac. Sci. Technol. A (April 2014)
Growth mode evolution of hafnium oxide by atomic layer deposition
J. Vac. Sci. Technol. A (November 2013)
Field-effect passivation of metal/n-GaAs Schottky junction solar cells using atomic layer deposited Al2O3/ZnO ultrathin films
J. Vac. Sci. Technol. A (December 2019)