The effects of alloy disorder on deep levels in Hg1xCdxTe are investigated, using the embedded cluster method and the theory of deep levels. For the present application, only the effects of the nearest‐neighbor disorder on deep levels produced by substitutional impurities on the anion (Te) site of this material are considered. However, the approach used can be generalized to account for such disorder effects in the second‐ and higher‐neighbor environments of an impurity and can thus be extended to impurities on the cation (Cd/Hg) site in Hg1xCdxTe. Results are presented for the composition dependences of the component lines, the center, and the width of the alloy broadened spectrum of a deep level occurring at ‘‘midgap’’ for x=0.25.

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