p–n junctions in ternary Hg1−xMnxTe and quaternary Hg1−x−yCdxMnyTe semimagnetic semiconducting alloys with energy band gaps from 100 to 770 meV were produced by the Hg diffusion method. Current–voltage curves, differential resistivity, and spectral characteristics were measured in the temperature range from 4.2 to 300 K. Material and technological parameters on the electric and photoelectric properties of p–n junctions were analyzed.
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© 1986 American Vacuum Society.
1986
American Vacuum Society
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