Infrared photovoltaic detectors utilizing Hg_1−xMn_xTe and Hg_1−x−yCd_xMn_yTe alloys

p–n junctions in ternary Hg_1−xMn_xTe and quaternary Hg_1−x−yCd_xMn_yTe semimagnetic semiconducting alloys with energy band gaps from 100 to 770 meV were produced by the Hg diffusion method. Current–voltage curves, differential resistivity, and spectral characteristics were measured in the temperature range from 4.2 to 300 K. Material and technological parameters on the electric and photoelectric properties of p–n junctions were analyzed.