Photo‐MOVPE of HgTe, CdTe, and CdxHg1−xTe using UV radiation in the system Et2Te:Me2Cd:Hg:H2:He is discussed. Two growth regimes can be identified one involving a heterogeneous surface controlled reaction which leads to high quality epitaxial growth and one which gives rise initially to a homogeneous gas phase reaction and compound formation as a ‘‘dust.’’ Potential reaction mechanisms responsible for these growth processes are discussed and analyzed. The respective roles of H2 and He as radical chain promotors and inhibitors in the decomposition of the alkyls is considered in the context of the potential generation of supersaturated atmospheres of Cd and Te.

This content is only available via PDF.
You do not currently have access to this content.