Thin films of composition ZnOx, with 0.7<x<1, have been deposited by modified planar magnetron sputtering using an rf discharge at the substrate to control film stoichiometry. A decrease in resistivity from 0.02 to 0.002 Ω cm and an associated transition from an absorbing to transparent appearance was observed as the oxygen content of the films was increased. For all films, the optical constants n and k in the wavelength range 0.4–2.5 μm were deduced and the reflectivity was measured between 2.5 and 20 μm wavelength. The optical properties of transparent and absorbing films were modeled by a dielectric function incorporating the Drude theory of free electrons, the Lorentz theory of lattice absorption, and a Maxwell–Garnett description of zinc inclusions.
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May 1986
Research Article|
May 01 1986
Optical properties of nonstoichiometric zinc oxide films deposited by bias sputtering
M. J. Brett;
M. J. Brett
Department of Electrical Engineering, University of Alberta, Edmonton, Alberta, Canada T6G 2E1
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R. R. Parsons
R. R. Parsons
Department of Physics, University of British Columbia, Vancouver, Canada V6T 1W5
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J. Vac. Sci. Technol. A 4, 423–427 (1986)
Article history
Received:
September 23 1985
Accepted:
November 20 1985
Citation
M. J. Brett, R. R. Parsons; Optical properties of nonstoichiometric zinc oxide films deposited by bias sputtering. J. Vac. Sci. Technol. A 1 May 1986; 4 (3): 423–427. https://doi.org/10.1116/1.573895
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