Hydrogen‐bombardment‐induced structural changes in single‐crystal silicon were studied using ellipsometry and transmission electron microscopy techniques. Hydrogen ion energies ranged from 400 to 1900 eV and the total dose was about 5×1019 ions/cm2. Various degrees of damage and phase mixtures in the layers were identified. It was concluded that ellipsometry can be used effectively as a nondestructive characterizational tool for analyzing bombardment‐induced microstructural changes in this material.

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