Structural studies of hydrogen‐bombarded silicon using ellipsometry and transmission electron microscopy

Hydrogen‐bombardment‐induced structural changes in single‐crystal silicon were studied using ellipsometry and transmission electron microscopy techniques. Hydrogen ion energies ranged from 400 to 1900 eV and the total dose was about 5×10¹⁹ ions/cm². Various degrees of damage and phase mixtures in the layers were identified. It was concluded that ellipsometry can be used effectively as a nondestructive characterizational tool for analyzing bombardment‐induced microstructural changes in this material.