Intrinsic point defects are commonly present in and can strongly affect the electronic properties of complex oxides and their interfaces. The near- and subsurface characterization techniques, depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy, can measure the density distributions, energy levels, and optical transitions of intrinsic point defects in complex oxides on a near-nanometer scale. These measurements on SrTiO3, BaTiO3, and related materials reveal the sensitivity of intrinsic point defects to growth temperature, mechanical strain, crystal orientation, and chemical interactions. Spatial redistribution of these defects can vary significantly near surfaces and interfaces and can have strong electronic effects. The combination of these deep level spectroscopies along with other advanced characterization techniques provides an avenue to further expand the understanding and control of complex oxide defects in general.
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Deep level defect spectroscopies of complex oxide surfaces and interfaces
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December 2021
Research Article|
October 20 2021
Deep level defect spectroscopies of complex oxide surfaces and interfaces
Jun Zhang;
Jun Zhang
1
Spears School of Business, Oklahoma State University
, Stillwater, Oklahoma 74078
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Kyle McNicholas;
Kyle McNicholas
2
MIT Lincoln Laboratories
, Lexington, Massachusetts 02421
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Snjezana Balaz;
Snjezana Balaz
3
Department of Physics, Astronomy, Geology, and Environmental Science, Youngstown State University
, Youngstown, Ohio 44555
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Zhao Quan Zeng;
Zhao Quan Zeng
4
II-VI Incorporated
, Warren, Pennsylvania 07059
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Darrell Schlom;
Darrell Schlom
5
Department of Materials Science and Engineering, Cornell University
, Ithaca, New York 148536
Kavli Institute at Cornell for Nanoscale Science
, Ithaca, New York 14853
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Leonard J. Brillson
Leonard J. Brillson
a)
7
Department of Electrical and Computer Engineering, The Ohio State University
, Columbus, Ohio 432108
Department of Physics, The Ohio State University
, Columbus, Ohio 43210a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is a part of the Special Collection Honoring Dr. Scott Chambers' 70th Birthday and His Leadership in the Science and Technology of Oxide Thin Films.
J. Vac. Sci. Technol. A 39, 063215 (2021)
Article history
Received:
August 06 2021
Accepted:
September 30 2021
Citation
Jun Zhang, Kyle McNicholas, Snjezana Balaz, Zhao Quan Zeng, Darrell Schlom, Leonard J. Brillson; Deep level defect spectroscopies of complex oxide surfaces and interfaces. J. Vac. Sci. Technol. A 1 December 2021; 39 (6): 063215. https://doi.org/10.1116/6.0001339
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