This Letter reports the formation, evolution, and prevention of thermally induced defects on germanium upon high-temperature (up to 890 C) vacuum ( Torr or mbar) annealing. It is found that the shape of defects evolves depending on the annealing temperature and duration. The defect shape can be classified into three groups (pyramid, expanded pyramid, and doughnut), considering the interplay of chemical desorption and surface diffusion. The effects of annealing conditions on the density and size of defects are also investigated with scanning electron microscopy and atomic force microscopy. To prevent thermally induced defects, a simple covering method is proposed and demonstrated. In addition, formation and prevention of defects resulting from high-temperature (1150 C) vacuum annealing are applied to silicon.
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December 2021
Letter|
September 29 2021
Formation, evolution, and prevention of thermally induced defects on germanium and silicon upon high-temperature vacuum annealing
Taeyeong Kim
;
Taeyeong Kim
1
Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology
, Daejeon 34141, South Korea
2
Center for Extreme Thermal Physics and Manufacturing, Korea Advanced Institute of Science and Technology
, Daejeon 34141, South Korea
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Mun Goung Jeong
;
Mun Goung Jeong
1
Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology
, Daejeon 34141, South Korea
2
Center for Extreme Thermal Physics and Manufacturing, Korea Advanced Institute of Science and Technology
, Daejeon 34141, South Korea
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Bong Jae Lee
;
Bong Jae Lee
a)
1
Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology
, Daejeon 34141, South Korea
2
Center for Extreme Thermal Physics and Manufacturing, Korea Advanced Institute of Science and Technology
, Daejeon 34141, South Korea
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Jungchul Lee
Jungchul Lee
a)
1
Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology
, Daejeon 34141, South Korea
2
Center for Extreme Thermal Physics and Manufacturing, Korea Advanced Institute of Science and Technology
, Daejeon 34141, South Korea
Search for other works by this author on:
Taeyeong Kim
1,2
Mun Goung Jeong
1,2
Bong Jae Lee
1,2,a)
Jungchul Lee
1,2,a)
1
Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology
, Daejeon 34141, South Korea
2
Center for Extreme Thermal Physics and Manufacturing, Korea Advanced Institute of Science and Technology
, Daejeon 34141, South Korea
J. Vac. Sci. Technol. A 39, 060403 (2021)
Article history
Received:
July 22 2021
Accepted:
September 13 2021
Citation
Taeyeong Kim, Mun Goung Jeong, Bong Jae Lee, Jungchul Lee; Formation, evolution, and prevention of thermally induced defects on germanium and silicon upon high-temperature vacuum annealing. J. Vac. Sci. Technol. A 1 December 2021; 39 (6): 060403. https://doi.org/10.1116/6.0001308
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