We have investigated the solid-phase epitaxial crystallization of β-Ga2O3 thin films on NiO (111) (3 nm thick)-buffered α-Al2O3 (0001) substrates prepared by pulsed KrF excimer laser irradiation onto amorphous Ga2O3 thin films from the backside of the substrate at room temperature. The results of x-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy indicated that the solid-phase crystallization of the amorphous Ga2O3 thin film to epitaxial β-Ga2O3 film started from the film/substrate interface toward the film surface with an average growth rate of about 0.1 nm thickness per one pulse irradiation. The optical bandgap of the epitaxial β-Ga2O3 thin films (∼80 nm thick) was estimated to be 4.9 eV from the UV/Vis transmittance measurement.
Solid-phase epitaxial crystallization of β-Ga2O3 thin film by KrF excimer laser irradiation from backside of NiO (111)-buffered α-Al2O3 (0001) substrate at room temperature
Hiroyuki Morita, Takumi Matsushima, Kisho Nakamura, Kenta Kaneko, Satoru Kaneko, Akifumi Matsuda, Mamoru Yoshimoto; Solid-phase epitaxial crystallization of β-Ga2O3 thin film by KrF excimer laser irradiation from backside of NiO (111)-buffered α-Al2O3 (0001) substrate at room temperature. J. Vac. Sci. Technol. A 1 July 2021; 39 (4): 043414. https://doi.org/10.1116/6.0000996
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