Three different compounds, cubic Gd2O3, orthorhombic GdGaO3, and cubic Gd3Ga5O12 doped with Pr3+ ions were fabricated as waveguiding films by pulsed laser deposition from the same target material, Pr3+ doped Gd3Ga5O12 (Pr:GGG) single crystal. All of them were deposited at the same substrate temperature of 800 °C. The different crystalline phases obtained depend only on the ambient oxygen pressure and the substrate type (YAG or YAP single crystals). The structural and texture properties of the films were analyzed by x-ray diffraction. Pr3+ fluorescence properties were found to be similar to those of the bulk crystals. The refractive indices and waveguiding properties of the films were determined. The fluorescence properties of Pr3+ doping ions and the refractive index of the film are presented. The oriented crystalline Pr:GdGaO3 and Pr:GGG films show waveguiding propagation with attenuation around 2.5 and 1 dB/cm, respectively.
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July 2021
Research Article|
May 11 2021
Effect of oxygen pressure on stoichiometric transfer in laser ablation of Pr3+ doped Gd2O3–Ga2O3 binary system
Special Collection:
Gallium Oxide Materials and Devices
Jan Lancok
;
Jan Lancok
a)
1
Institute of Physics, Czech Academy of Sciences
, Na Slovance 2, 18221 Prague, Czech Republic
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Michal Novotny
;
Michal Novotny
1
Institute of Physics, Czech Academy of Sciences
, Na Slovance 2, 18221 Prague, Czech Republic
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Lenka Volfova
;
Lenka Volfova
1
Institute of Physics, Czech Academy of Sciences
, Na Slovance 2, 18221 Prague, Czech Republic
2
Faculty of Science, Charles University
, Hlavova 2030/8, 12843 Praha 2, Czech Republic
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Joris More-Chevalier
;
Joris More-Chevalier
1
Institute of Physics, Czech Academy of Sciences
, Na Slovance 2, 18221 Prague, Czech Republic
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Antonio Pereira
Antonio Pereira
3
Univ. Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière
, UMR 5306, F-69622, Villeurbanne, France
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a)
Electronic mail: lancok@fzu.cz
Note: This paper is part of the Special Topic Collection on Gallium Oxide Materials and Devices.
J. Vac. Sci. Technol. A 39, 043403 (2021)
Article history
Received:
February 25 2021
Accepted:
April 20 2021
Citation
Jan Lancok, Michal Novotny, Lenka Volfova, Joris More-Chevalier, Antonio Pereira; Effect of oxygen pressure on stoichiometric transfer in laser ablation of Pr3+ doped Gd2O3–Ga2O3 binary system. J. Vac. Sci. Technol. A 1 July 2021; 39 (4): 043403. https://doi.org/10.1116/6.0001001
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