This study investigates amorphous SiCN thin films deposited by remote plasma atomic layer deposition. Bis[(diethylamino)dimethylsilyl](trimethylsilyl)amine (DTDN-2) and N2 plasma were used as the precursor and reactant, respectively. The deposition temperature ranged from 100 to 300 °C, and the plasma power was set to 100 and 300 W. It was determined that the SiCN film carbon content increased with decreasing plasma power and deposition temperature. Likewise, decreasing the plasma power and deposition temperature lowered the dielectric constant of the film owing to the low film density and high carbon content. It was found that the composition of the SiCN film deposited at 300 °C was similar to that of the SiN film. The wet etch rate of the film deposited at 200 °C had the lowest value owing to the carbon content and high film density. The chemical bonding states of Si, C, and N were measured by x-ray photoelectron spectroscopy.
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July 2021
Research Article|
June 24 2021
Characteristics of carbon-containing low-k dielectric SiCN thin films deposited via remote plasma atomic layer deposition
Special Collection:
Atomic Layer Deposition (ALD)
Chanwon Jung;
Chanwon Jung
1
Division of Materials Science and Engineering, Hanyang University
, Seoul 04763, South Korea
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Seokhwi Song;
Seokhwi Song
2
Division of Nano-scale Semiconductor Engineering, Hanyang University
, Seoul 04763, South Korea
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Hyunwoo Park
;
Hyunwoo Park
1
Division of Materials Science and Engineering, Hanyang University
, Seoul 04763, South Korea
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Youngjoon Kim;
Youngjoon Kim
1
Division of Materials Science and Engineering, Hanyang University
, Seoul 04763, South Korea
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Eun Jong Lee;
Eun Jong Lee
1
Division of Materials Science and Engineering, Hanyang University
, Seoul 04763, South Korea
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Sung Gwon Lee;
Sung Gwon Lee
1
Division of Materials Science and Engineering, Hanyang University
, Seoul 04763, South Korea
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Hyeongtag Jeon
Hyeongtag Jeon
a)
1
Division of Materials Science and Engineering, Hanyang University
, Seoul 04763, South Korea
2
Division of Nano-scale Semiconductor Engineering, Hanyang University
, Seoul 04763, South Korea
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a)
Electronic mail: [email protected]
Note: This paper is part of the 2022 Special Topic Collection on Atomic Layer Deposition (ALD).
J. Vac. Sci. Technol. A 39, 042404 (2021)
Article history
Received:
December 23 2020
Accepted:
June 08 2021
Citation
Chanwon Jung, Seokhwi Song, Hyunwoo Park, Youngjoon Kim, Eun Jong Lee, Sung Gwon Lee, Hyeongtag Jeon; Characteristics of carbon-containing low-k dielectric SiCN thin films deposited via remote plasma atomic layer deposition. J. Vac. Sci. Technol. A 1 July 2021; 39 (4): 042404. https://doi.org/10.1116/6.0000887
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