The epitaxial growth of tin in an alpha phase (α-Sn) is desired for its topological properties. In this study, we have successfully grown a series of α-Sn films on CdTe (001) substrates by molecular beam epitaxy with different thicknesses. A (2 × 1) surface reconstruction of CdTe is obtained due to efficient cleaning by atomic hydrogen, which favors the α-Sn growth. The high quality of the α-Sn films has been confirmed by x-ray diffraction, atomic force microscopy, etc. Thickness and temperature-dependent electrical transport properties have been studied. All the samples show a p-type transport at room temperature, but transitions in transport type are observed at lower temperatures. These transport behaviors can be well explained by a three-band model, and a phase diagram illustrating the transport behaviors in α-Sn is presented.
Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxy
Yuanfeng Ding, Jinshan Yao, Ziyuan Yuan, Chen Li, Ming-Hui Lu, Hong Lu, Yan-Feng Chen; Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxy. J. Vac. Sci. Technol. A 1 May 2021; 39 (3): 033408. https://doi.org/10.1116/6.0000756
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