The epitaxial growth of tin in an alpha phase (α-Sn) is desired for its topological properties. In this study, we have successfully grown a series of α-Sn films on CdTe (001) substrates by molecular beam epitaxy with different thicknesses. A (2 × 1) surface reconstruction of CdTe is obtained due to efficient cleaning by atomic hydrogen, which favors the α-Sn growth. The high quality of the α-Sn films has been confirmed by x-ray diffraction, atomic force microscopy, etc. Thickness and temperature-dependent electrical transport properties have been studied. All the samples show a p-type transport at room temperature, but transitions in transport type are observed at lower temperatures. These transport behaviors can be well explained by a three-band model, and a phase diagram illustrating the transport behaviors in α-Sn is presented.
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March 24 2021
Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxy
Yuanfeng Ding
;
Yuanfeng Ding
1
National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University
, Nanjing 210093, China
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Jinshan Yao
;
Jinshan Yao
1
National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University
, Nanjing 210093, China
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Ziyuan Yuan
;
Ziyuan Yuan
1
National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University
, Nanjing 210093, China
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Chen Li;
Chen Li
1
National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University
, Nanjing 210093, China
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Ming-Hui Lu
;
Ming-Hui Lu
1
National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University
, Nanjing 210093, China
2
Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University
, Nanjing 210093, China
3
Collaborative Innovation Center of Advanced Microstructures, Nanjing University
, Nanjing 210093, China
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Hong Lu
;
Hong Lu
a)
1
National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University
, Nanjing 210093, China
2
Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University
, Nanjing 210093, China
3
Collaborative Innovation Center of Advanced Microstructures, Nanjing University
, Nanjing 210093, China
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Yan-Feng Chen
Yan-Feng Chen
1
National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University
, Nanjing 210093, China
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a)
Electronic mail: hlu@nju.edu.cn
Note: This paper is part of the Special Topic Collection: Honoring Dr. Art Gossard's 85th Birthday and his Leadership in the Science and Technology of Molecular Beam Epitaxy.
J. Vac. Sci. Technol. A 39, 033408 (2021)
Article history
Received:
November 04 2020
Accepted:
March 02 2021
Citation
Yuanfeng Ding, Jinshan Yao, Ziyuan Yuan, Chen Li, Ming-Hui Lu, Hong Lu, Yan-Feng Chen; Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxy. J. Vac. Sci. Technol. A 1 May 2021; 39 (3): 033408. https://doi.org/10.1116/6.0000756
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