Heterojunction field-effect transistors based on the β-(AlxGa1−x)2O3/Ga2O3 heterostructure grown by ozone-assisted molecular beam epitaxy were demonstrated for the first time. Al composition ratios in the 14%–23% range were validated using x-ray diffraction on the three samples grown for this study. Electrochemical capacitance-voltage (ECV) measurements showed the presence of a charge sheet in the delta-doped (AlxGa1−x)2O3 barrier layer. Secondary ion mass spectroscopy and ECV measurements also revealed an unintentional Si peak at the (AlxGa1−x)2O3/Ga2O3 interface. Direct current (IDS-VGS) and transconductance (Gm-VGS) measurements demonstrated depletion-mode transistor operation as well as the presence of a parallel conduction channel. A one-dimensional Poisson model suggested that dopant redistribution in the delta-doped region could cause a secondary channel to form in the barrier in addition to the primary channel near the (AlxGa1−x)2O3/Ga2O3 interface under certain conditions met in these samples. Fabricated devices on sample A did not exhibit breakdown up to the measurement limit of 1100 V, with stability after ten cycles. A maximum output drain current density of 22 mA/mm was measured on sample B. Room temperature Hall measurements yielded a sheet carrier density of 1.12 × 1013 cm−2 with corresponding Hall mobility of 95 cm2/V s in sample C.
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Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
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Research Article|
March 09 2021
Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
Special Collection:
Gallium Oxide Materials and Devices
Marko J. Tadjer
;
Marko J. Tadjer
a)
1
U.S. Naval Research Laboratory
, 4555 Overlook Ave. SW, Washington, DC 20375
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Kohei Sasaki;
Kohei Sasaki
2
Novel Crystal Technology, Inc.
, Sayama, Saitama 350-1328, Japan
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Daiki Wakimoto;
Daiki Wakimoto
2
Novel Crystal Technology, Inc.
, Sayama, Saitama 350-1328, Japan
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Travis J. Anderson;
Travis J. Anderson
1
U.S. Naval Research Laboratory
, 4555 Overlook Ave. SW, Washington, DC 20375
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Michael A. Mastro
;
Michael A. Mastro
1
U.S. Naval Research Laboratory
, 4555 Overlook Ave. SW, Washington, DC 20375
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James C. Gallagher;
James C. Gallagher
1
U.S. Naval Research Laboratory
, 4555 Overlook Ave. SW, Washington, DC 20375
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Alan G. Jacobs
;
Alan G. Jacobs
1
U.S. Naval Research Laboratory
, 4555 Overlook Ave. SW, Washington, DC 20375
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Alyssa L. Mock;
Alyssa L. Mock
3NRC Research Associateship Programs, 500 Fifth Street, Washington, DC 20001
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Andrew D. Koehler;
Andrew D. Koehler
1
U.S. Naval Research Laboratory
, 4555 Overlook Ave. SW, Washington, DC 20375
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Mona Ebrish;
Mona Ebrish
3NRC Research Associateship Programs, 500 Fifth Street, Washington, DC 20001
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Karl D. Hobart;
Karl D. Hobart
1
U.S. Naval Research Laboratory
, 4555 Overlook Ave. SW, Washington, DC 20375
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Akito Kuramata
Akito Kuramata
2
Novel Crystal Technology, Inc.
, Sayama, Saitama 350-1328, Japan
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a)
Electronic mail: marko.tadjer@nrl.navy.mil
Note: This paper is part of the Special Topic Collection on Gallium Oxide Materials and Devices.
J. Vac. Sci. Technol. A 39, 033402 (2021)
Article history
Received:
January 18 2021
Accepted:
February 16 2021
Citation
Marko J. Tadjer, Kohei Sasaki, Daiki Wakimoto, Travis J. Anderson, Michael A. Mastro, James C. Gallagher, Alan G. Jacobs, Alyssa L. Mock, Andrew D. Koehler, Mona Ebrish, Karl D. Hobart, Akito Kuramata; Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy. J. Vac. Sci. Technol. A 1 May 2021; 39 (3): 033402. https://doi.org/10.1116/6.0000932
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