The band alignment between oxygen plasma-assisted atomic layer deposition Al2O3 films and β-Ga2O3 (−201) substrates under different deposition temperatures was characterized by x-ray photoelectron spectroscopy. As the deposition temperature increased from 30 to 200 °C, all the heterojunctions exhibited a type-I alignment. The bandgap of Al2O3 enlarged from 6.26 ± 0.1 to 6.81 ± 0.1 eV, leading to the conduction band offset varying linearly from 1.39 ± 0.1 to 1.95 ± 0.1 eV, while the valence band offset was insensitive. This difference was attributed to Al ion deficiency and hydroxyl groups induced by an inadequate reaction of trimethylaluminum under low deposition temperatures, which was proved by secondary ion mass spectrometry (SIMs) and Fourier-transform infrared spectroscopy (FTIR). These findings could facilitate the design of a CBO-controllable Al2O3/β-Ga2O3 heterojunction through deposition temperature.
Band alignment modulation of atomic layer deposition-prepared Al2O3/β-Ga2O3 heterojunction interface by deposition temperature
Shun Zhou, Hao Liu, Linpeng Dong, Weiguo Liu, Shigeng Song, Wenjun Liu; Band alignment modulation of atomic layer deposition-prepared Al2O3/β-Ga2O3 heterojunction interface by deposition temperature. J. Vac. Sci. Technol. A 1 May 2021; 39 (3): 030403. https://doi.org/10.1116/6.0000951
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