Atomic layer etching (ALE) is a multistep process used for removing ultrathin layers of the material. The removal step can be driven by ion bombardment, typically with energies of <100 eV and step times of >1 s. Previously, we reported a new ALE operating regime where exposures to ion energies were >500 eV and step times were <1 s. This paper provides a simple theoretical basis for unifying the low energy/long exposure and high energy/short exposure ALE regimes. This insight is captured in a scaling relationship that expands the concept of an ALE processing window and the corresponding application space.
Universal scaling relationship for atomic layer etching
Keren J. Kanarik, Samantha Tan, Wenbing Yang, Ivan L. Berry, Yang Pan, Richard A. Gottscho; Universal scaling relationship for atomic layer etching. J. Vac. Sci. Technol. A 1 January 2021; 39 (1): 010401. https://doi.org/10.1116/6.0000762
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