Area-selective bottom-up synthesis routes of thin films are required to overcome the current limits in lithography, and such growth can be achieved with high quality and nanometer thickness control by area-selective atomic layer deposition (AS-ALD). However, the current range of materials demonstrated deposited by AS-ALD is limited, and no processes for molybdenum oxide have been available so far. In this work, the authors explore the properties of a new ALD precursor, MoCl4O, for deposition of molybdenum oxides by ALD. MoCl4O is administered at room temperature during deposition, making it readily available for use. When reacted with a combination of water and ozone, it leads to an AS-ALD process for deposition of MoOx—the first reported. The process is perfectly selective for growth on glass as compared to Si(100) substrates for deposition temperatures between 200 and 300 °C, with a growth rate of 0.72 Å/cycle at 300 °C. The process is attempted on a range of substrates proving good growth on soda-lime glass and LiF and no growth on Si(100), silica, Na2CO3, CaCO3, Li3PO3, or Li2SiO3. The findings of this study indicate an activated process by diffusion of sodium or lithium through the film during growth. The obtained films have further been characterized by x-ray photoelectron spectroscopy, scanning electron microscopy, x-ray diffraction, and atomic force microscopy, revealing films with an RSM roughness of 23 nm with the presence of crystalline MoO2 (C P/m) when deposited at 300 °C and crystalline Mo9O26 when deposited at 250 °C. The rough MoOx thin films may be applicable for electrocatalysis, gas sensors, or lithium-ion batteries. The findings of this study enable AS-ALD synthesis of molybdenum oxide with excellent selectivity not dependent on intermittent etching cycles during growth.
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July 2020
Research Article|
June 17 2020
Area-selective atomic layer deposition of molybdenum oxide
Special Collection:
Special Topic Collection on Area Selective Deposition
Julie Nitsche Kvalvik
;
Julie Nitsche Kvalvik
1
Centre for Materials Science and Nanotechnology, Department of Chemistry, University of Oslo
, Postboks 1033, Blindern, 0315 Oslo, Norway
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Jon Borgersen
;
Jon Borgersen
2
Centre for Materials Science and Nanotechnology, Department of Physics, University of Oslo
, Postboks 1048, Blindern, 0315 Oslo, Norway
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Per-Anders Hansen
;
Per-Anders Hansen
1
Centre for Materials Science and Nanotechnology, Department of Chemistry, University of Oslo
, Postboks 1033, Blindern, 0315 Oslo, Norway
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Ola Nilsen
Ola Nilsen
a)
1
Centre for Materials Science and Nanotechnology, Department of Chemistry, University of Oslo
, Postboks 1033, Blindern, 0315 Oslo, Norway
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a)
Electronic mail: ola.nilsen@kjemi.uio.no
Note: This paper is a part of the Special Topic Collection on Area Selective Deposition.
J. Vac. Sci. Technol. A 38, 042406 (2020)
Article history
Received:
March 28 2020
Accepted:
May 19 2020
Connected Content
A companion article has been published:
Precursor for atomic layer deposition helps grow molybdenum oxides selectively
Citation
Julie Nitsche Kvalvik, Jon Borgersen, Per-Anders Hansen, Ola Nilsen; Area-selective atomic layer deposition of molybdenum oxide. J. Vac. Sci. Technol. A 1 July 2020; 38 (4): 042406. https://doi.org/10.1116/6.0000219
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