SiO2-Fe2O3 mixture films and nanolaminates were grown by atomic layer deposition from iron trichloride, hexakis(ethylamino)disilane, and ozone at 300 °C. Orthorhombic ɛ-Fe2O3 was identified in Fe2O3 reference films and in Fe2O3 layers grown to certain thicknesses between amorphous SiO2 layers. SiO2-Fe2O3 films could be magnetized in external fields, exhibiting saturation and hysteresis in nonlinear magnetization-field curves. Electrical resistive switching, markedly dependent on the ratio of the component oxides, was also observed in films with proper composition. For relatively conductive films, application of small signal measurements allowed one to record memory maps with notable squareness and defined distinction between high and low conductance states.
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July 2020
Research Article|
June 17 2020
Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition
Special Collection:
Atomic Layer Deposition (ALD)
Kaupo Kukli
;
Kaupo Kukli
a)
1
Department of Chemistry, University of Helsinki
, P.O. Box 55, FI-00014 Helsinki, Finland
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Marianna Kemell
;
Marianna Kemell
1
Department of Chemistry, University of Helsinki
, P.O. Box 55, FI-00014 Helsinki, Finland
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Helena Castán
;
Helena Castán
2
Department of Electronics, University of Valladolid
, Paseo Belén, 15, 47011 Valladolid, Spain
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Salvador Dueñas
;
Salvador Dueñas
2
Department of Electronics, University of Valladolid
, Paseo Belén, 15, 47011 Valladolid, Spain
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Joosep Link
;
Joosep Link
3
National Institute of Chemical Physics and Biophysics
, Akadeemia tee 23, EE-12618 Tallinn, Estonia
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Raivo Stern
;
Raivo Stern
3
National Institute of Chemical Physics and Biophysics
, Akadeemia tee 23, EE-12618 Tallinn, Estonia
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Mikko J. Heikkilä
;
Mikko J. Heikkilä
1
Department of Chemistry, University of Helsinki
, P.O. Box 55, FI-00014 Helsinki, Finland
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Taivo Jõgiaas
;
Taivo Jõgiaas
4
Institute of Physics, University of Tartu
, W. Ostwald 1, 50411 Tartu, Estonia
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Jekaterina Kozlova
;
Jekaterina Kozlova
4
Institute of Physics, University of Tartu
, W. Ostwald 1, 50411 Tartu, Estonia
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Mihkel Rähn
;
Mihkel Rähn
4
Institute of Physics, University of Tartu
, W. Ostwald 1, 50411 Tartu, Estonia
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Kenichiro Mizohata
;
Kenichiro Mizohata
5
Accelerator Laboratory, Department of Physics, University of Helsinki
, P.O. Box 43, FI-00014 Helsinki, Finland
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Mikko Ritala
;
Mikko Ritala
1
Department of Chemistry, University of Helsinki
, P.O. Box 55, FI-00014 Helsinki, Finland
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Markku Leskelä
Markku Leskelä
1
Department of Chemistry, University of Helsinki
, P.O. Box 55, FI-00014 Helsinki, Finland
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a)
E-mail: kaupo.kukli@ut.ee
Note: This paper is part of the 2021 Special Topic Collection on Atomic Layer Deposition (ALD).
J. Vac. Sci. Technol. A 38, 042405 (2020)
Article history
Received:
March 26 2020
Accepted:
May 28 2020
Citation
Kaupo Kukli, Marianna Kemell, Helena Castán, Salvador Dueñas, Joosep Link, Raivo Stern, Mikko J. Heikkilä, Taivo Jõgiaas, Jekaterina Kozlova, Mihkel Rähn, Kenichiro Mizohata, Mikko Ritala, Markku Leskelä; Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition. J. Vac. Sci. Technol. A 1 July 2020; 38 (4): 042405. https://doi.org/10.1116/6.0000212
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