The growth of vanadium dioxide (VO2) thin films using tetrakis (ethyl-methyl) amino vanadium (TEMAV) and H2O by atomic layer deposition (ALD) has been investigated as a function of the exposure dose and residence time. A novel multiple pulse mode has been employed to mitigate the small deposition rate brought about by the low vapor pressure of TEMAV. Compared to the conventional ALD cycle with a single pulse of precursor, the use of multiple pulsing with very short pulse time allows lower consumption of precursor, but larger exposure dose and longer residence time on the growth surface, resulting in a higher growth rate for a low volatility precursor, while maintaining a good film uniformity across 4-in. wafers. The Raman analysis and the electrical resistivity modulation of the VO2 thin films show that the films synthesized by the multiple pulse mode is comparable to the films synthesized by the conventional single pulse mode.
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July 2020
Research Article|
May 15 2020
Influence of precursor dose and residence time on the growth rate and uniformity of vanadium dioxide thin films by atomic layer deposition
Special Collection:
Atomic Layer Deposition (ALD)
Kham M. Niang
;
Kham M. Niang
a)
Department of Engineering, University of Cambridge
, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
a)Author to whom correspondence should be addressed: kmn36@cam.ac.uk
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Guandong Bai;
Guandong Bai
Department of Engineering, University of Cambridge
, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
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John Robertson
John Robertson
Department of Engineering, University of Cambridge
, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
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a)Author to whom correspondence should be addressed: kmn36@cam.ac.uk
Note: This paper is part of the 2021 Special Topic Collection on Atomic Layer Deposition (ALD).
J. Vac. Sci. Technol. A 38, 042401 (2020)
Article history
Received:
February 26 2020
Accepted:
April 24 2020
Citation
Kham M. Niang, Guandong Bai, John Robertson; Influence of precursor dose and residence time on the growth rate and uniformity of vanadium dioxide thin films by atomic layer deposition. J. Vac. Sci. Technol. A 1 July 2020; 38 (4): 042401. https://doi.org/10.1116/6.0000152
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