The effects of thermal annealing on the concentration of cationic vacancies in p-type semiconducting NiO thin films have been studied by x-ray absorption spectroscopy at the O 1s threshold. This technique proves to be very sensitive to the amount of Ni vacancies through the intensity of a prepeak observed below the absorption threshold, associated with Ni ions in a high oxidation state. Samples with different vacancy concentrations were obtained by radio frequency magnetron sputtering with different O2/Ar ratios in the plasma. Thermal effects have been studied both during thin film growth and after postprocessing annealing. In both cases, the observed effects were very similar, showing a depletion of cationic vacancies with temperature. By changing the surface sensibility of the x-ray absorption spectroscopy measurements, the authors could find out that the transition to stoichiometric NiO begins at the surface.
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April 09 2020
Thermal induced depletion of cationic vacancies in NiO thin films evidenced by x-ray absorption spectroscopy at the O 1s threshold
Alejandro Gutiérrez
;
Alejandro Gutiérrez
a)
1
Departamento de Física Aplicada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid
, Cantoblanco, 28049 Madrid, Spain
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Guillermo Domínguez-Cañizares;
Guillermo Domínguez-Cañizares
1
Departamento de Física Aplicada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid
, Cantoblanco, 28049 Madrid, Spain
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Stefan Krause;
Stefan Krause
2
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
, Albert-Einstein-Straße 15, 12489 Berlin, Germany
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Daniel Díaz-Fernández;
Daniel Díaz-Fernández
1
Departamento de Física Aplicada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid
, Cantoblanco, 28049 Madrid, Spain
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Leonardo Soriano
Leonardo Soriano
1
Departamento de Física Aplicada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid
, Cantoblanco, 28049 Madrid, Spain
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a)
Electronic mail: a.gutierrez@uam.es
J. Vac. Sci. Technol. A 38, 033209 (2020)
Article history
Received:
February 05 2020
Accepted:
March 18 2020
Citation
Alejandro Gutiérrez, Guillermo Domínguez-Cañizares, Stefan Krause, Daniel Díaz-Fernández, Leonardo Soriano; Thermal induced depletion of cationic vacancies in NiO thin films evidenced by x-ray absorption spectroscopy at the O 1s threshold. J. Vac. Sci. Technol. A 1 May 2020; 38 (3): 033209. https://doi.org/10.1116/6.0000080
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