Nanolaminated aluminum oxide (Al2O3)/hafnium oxide (HfO2) thin films as well as single Al2O3 and HfO2 layers have been grown as gate dielectrics by the plasma enhanced atomic layer deposition technique on silicon carbide (4H-SiC) substrates. All the three dielectric films have been deposited at a temperature as low as 250 °C, with a total thickness of about 30 nm, and, in particular, the nanolaminated Al2O3/HfO2 films have been fabricated by alternating nanometric Al2O3 and HfO2 layers. The structural characteristics and dielectric properties of the nanolaminated Al2O3/HfO2 films have been evaluated and compared to those of the parent Al2O3 and HfO2 single layers. Moreover, the structural properties and their evolution upon annealing treatment at 800 °C have been investigated as a preliminar test for their possible implementation in the device fabrication flow chart. On the basis of the collected data, the nanolaminated films demonstrated to possess promising dielectric behavior with respect to the simple oxide layers.
Skip Nav Destination
,
,
,
Article navigation
Research Article|
April 15 2020
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices Available to Purchase
Special Collection:
Special Topic Collection on Atomic Layer Deposition (ALD)
Raffaella Lo Nigro;
Raffaella Lo Nigro
a)
Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (IMM)
, Strada VIII n5, 90121 Catania, Italy
Search for other works by this author on:
Emanuela Schilirò;
Emanuela Schilirò
Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (IMM)
, Strada VIII n5, 90121 Catania, Italy
Search for other works by this author on:
Patrick Fiorenza
;
Patrick Fiorenza
Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (IMM)
, Strada VIII n5, 90121 Catania, Italy
Search for other works by this author on:
Fabrizio Roccaforte
Fabrizio Roccaforte
Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (IMM)
, Strada VIII n5, 90121 Catania, Italy
Search for other works by this author on:
Raffaella Lo Nigro
a)
Emanuela Schilirò
Patrick Fiorenza
Fabrizio Roccaforte
Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (IMM)
, Strada VIII n5, 90121 Catania, Italy
a)
Electronic mail: [email protected]
Note: This paper is part of the 2020 Special Topic Collection on Atomic Layer Deposition (ALD).
J. Vac. Sci. Technol. A 38, 032410 (2020)
Article history
Received:
October 31 2019
Accepted:
April 01 2020
Citation
Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte; Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices. J. Vac. Sci. Technol. A 1 May 2020; 38 (3): 032410. https://doi.org/10.1116/1.5134662
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Perspective on improving the quality of surface and material data analysis in the scientific literature with a focus on x-ray photoelectron spectroscopy (XPS)
George H. Major, Joshua W. Pinder, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy
Tiffany C. Kaspar, Sarah Akers, et al.
Related Content
Annealing modulated microstructural and electrical properties of plasma-enhanced atomic layer deposition-derived HfO2/SiO2 nanolaminates on AlGaN/GaN
J. Vac. Sci. Technol. A (December 2023)
Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
J. Vac. Sci. Technol. A (November 2014)
Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
J. Vac. Sci. Technol. B (September 2014)
Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates
Appl. Phys. Lett. (June 1996)