Nanocrystalline HfOx films were synthesized by an atomic layer deposition method using Hf[N(CH3)C2H5]4 as the metal precursor and La(NO3)3·6H2O solution as the oxidant. La(NO3)3·6H2O solution played the role of both oxidant and catalyst, catalytic oxidant, where the La element in the deposited HfOx films was under the detection limit. The introduction of La(NO3)3·6H2O solution instead of H2O effectively altered the surface roughness, crystalline status, and resistive switching properties of HfOx films. Although the crystalline structures of both HfOx films made with La(NO3)3·6H2O solution and H2O were monoclinic, the surface roughness of the HfOx film grown by using the La(NO3)3·6H2O solution oxidant is smoother than that using H2O. Moreover, resistive switching characteristics of the HfOx insulator deposited with the La(NO3)3·6H2O solution oxidant enhanced not only uniformity of switching parameters but also endurance.
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May 2020
Research Article|
March 23 2020
Enhanced resistive switching characteristics of HfOx insulator fabricated by atomic layer deposition and La(NO3)3·6H2O solution as catalytic oxidant Available to Purchase
Special Collection:
Special Topic Collection on Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 38, 032405 (2020)
Article history
Received:
November 04 2019
Accepted:
March 04 2020
Citation
Yong Chan JungIn-Sung ParkSejong SeongTaehoon LeeSeon Yong KimJinho Ahn; Enhanced resistive switching characteristics of HfOx insulator fabricated by atomic layer deposition and La(NO3)3·6H2O solution as catalytic oxidant. J. Vac. Sci. Technol. A 1 May 2020; 38 (3): 032405. https://doi.org/10.1116/1.5134828
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